Etching processes used in MEMS production
First Claim
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1. A method of manufacturing an electronic device, comprising:
- providing a process chamber comprising an electronic device, the electronic device comprising a layer to be etched;
introducing an etchant into an expansion chamber, the etchant comprising a noble gas fluoride;
reducing the volume of the expansion chamber after introducing the etchant into the expansion chamber to increase the pressure of the etchant, wherein the volume of the expansion chamber is reduced when the expansion chamber is not in fluid communication with the process chamber; and
introducing the pressurized etchant into the process chamber to expose the sacrificial layer to the etchant.
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Abstract
The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.
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Citations
15 Claims
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1. A method of manufacturing an electronic device, comprising:
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providing a process chamber comprising an electronic device, the electronic device comprising a layer to be etched; introducing an etchant into an expansion chamber, the etchant comprising a noble gas fluoride; reducing the volume of the expansion chamber after introducing the etchant into the expansion chamber to increase the pressure of the etchant, wherein the volume of the expansion chamber is reduced when the expansion chamber is not in fluid communication with the process chamber; and introducing the pressurized etchant into the process chamber to expose the sacrificial layer to the etchant. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing an electronic device, comprising:
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providing a process chamber containing an electronic device, the electronic device comprising a layer to be etched; introducing an etchant into the process chamber, the etchant comprising a noble gas fluoride, wherein introducing an etchant into the process chamber comprises; introducing the etchant into an expansion chamber; reducing the volume of the expansion chamber after introducing the etchant into the expansion chamber; and placing the expansion chamber into fluid communication with the process chamber after the volume of the expansion chamber is reduced; monitoring the partial pressure of the etchant in the process chamber; and introducing additional etchant into the process chamber based at least in part on the monitored partial pressure of the etchant in the process chamber. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification