System and method of dosage profile control
First Claim
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1. A method for manufacturing semiconductor devices, the method comprising:
- providing a semiconductor wafer;
separating the semiconductor wafer into at least a first cell and a second cell;
assigning the first cell a first dosage and assigning the second cell a second dosage;
decomposing the first dosage into a first dimension component and a second dimension component;
decomposing the second dosage into a third dimension component and a fourth dimension component;
converting the first dimension component into a first velocity, converting the second dimension component into a second velocity, converting the third dimension component into a third velocity, and converting the fourth dimension component into a fourth velocity;
implanting dopants into the first cell using the first velocity and the second velocity, the implanting dopants being performed with an ion implanter; and
implanting dopants into the second cell using the third velocity and the fourth velocity, the implanting dopants being performed with the ion implanter.
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Abstract
A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.
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16 Claims
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1. A method for manufacturing semiconductor devices, the method comprising:
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providing a semiconductor wafer; separating the semiconductor wafer into at least a first cell and a second cell; assigning the first cell a first dosage and assigning the second cell a second dosage; decomposing the first dosage into a first dimension component and a second dimension component; decomposing the second dosage into a third dimension component and a fourth dimension component; converting the first dimension component into a first velocity, converting the second dimension component into a second velocity, converting the third dimension component into a third velocity, and converting the fourth dimension component into a fourth velocity; implanting dopants into the first cell using the first velocity and the second velocity, the implanting dopants being performed with an ion implanter; and implanting dopants into the second cell using the third velocity and the fourth velocity, the implanting dopants being performed with the ion implanter. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for implanting dopants comprising:
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providing a substrate; separating the substrate into a plurality of cells; determining a dosage for each one of the plurality of cells; decomposing the dosage for each one of the plurality of cells into directional components; translating the directional components into directional velocities for each one of the plurality of cells, the translating the directional components using at least one conversion factor; applying the directional velocities to a substrate control system; and implanting ions into the plurality of cells as the substrate and an ion beam move relative to each other at the directional velocities for each respective cell into which the ion beam is implanting ions. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
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Specification