Electrical device including a functional element in a cavity

• US 8,309,858 B2
• Filed: 01/23/2009
• Issued: 11/13/2012
• Est. Priority Date: 01/25/2008
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kojima, Akihiro, Sugizaki, Yoshiaki, Shimooka, Yoshiaki
• Primary Examiner(s): Norris, Jeremy
• Assistant Examiner(s): Willis, Tremesha S
• Application Number:
  US12/358,869
• Publication Number:
  US 20090188709A1
• Time in Patent Office: 1,390 Days
• Field of Search: None
• US Class Current: 174/260
• CPC Class Codes: B81B 2201/0221 Variable capacitors
• CPC Class Codes: B81B 2203/04 Electrodes
• CPC Class Codes: B81B 7/0038 using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
• CPC Class Codes: B81C 1/00476 removing a sacrificial layer B81C1/00912 takes precedence

Abstract

A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

Claims

1. An electrical device comprising:

a substrate including a functional element;

an insulating first film configured to form a cavity containing the functional element, together with the substrate, and to include a plurality of through-holes, the cavity including a space between the insulating first film and the functional element;

an insulating second film configured to cover the plurality of the through-holes, the second film being formed on the first film and having a gas permeability higher than that of the first film;

an insulating third film configured to form at least on the second film, the third film having a gas permeability lower than that of the second film, the insulating third film being in contact with the insulating second film; and

an insulating fourth film configured to form on the third film, the fourth film having an elasticity higher than that of the third film.

2. The device of claim 1, further comprising:

an insulating fifth film configured to cover a side surface of the second film, the fifth film having a gas permeability lower than that of the second film.

3. The device of claim 2, wherein the fifth film and the third film are films formed of the same material.

4. The device of claim 2, further comprising, an electrode formed outside the second film.

5. The device of claim 2, further comprising:

wiring of which one end is connected to the functional element and of which the other end is extended outside the second film;

an organic film which is apart from the second film, covers the other end of the wiring and includes an opening corresponding to the other end of the wiring; and

a bump which is formed on the organic film surrounding the opening and is connected to the other end of the wiring.

6. The device of claim 1, wherein the first film is a silicon compound which consists mainly of Si—

O bonds;

the second film is any one of a thermosetting-type resin, an ultraviolet-curable resin and an electron-beam curing-type resin which consist mainly of carbon;

the third film is a silicon compound which consists mainly of Si—

N bonds; and

the fourth film is one of an epoxy resin and a polyimide resin.

7. The device of claim 1, wherein the second film closes each of the through-holes.

8. The device of claim 7, further comprising:

an insulating fifth film configured to cover a side surface of the second film, the insulating fifth film having a gas permeability lower than that of the second film.

9. The device of claim 8, wherein the fifth film and the third film are films formed of the same material.

10. The device of claim 8, further comprising, an electrode formed outside the second film.

11. The device of claim 10, further comprising:

wiring of which one end is connected to the functional element and of which the other end is extended outside the second film;

an organic film which is apart from the second film, covers the other end of the wiring and includes an opening corresponding to the other end of the wiring; and

a bump which is formed on the organic film surrounding the opening and is connected to the other end of the wiring.

12. The device of claim 7, wherein the first film is a silicon compound which consists mainly of Si—

O bonds;

the second film is any one of a thermosetting-type resin, an ultraviolet-curable resin and an electron-beam curing-type resin which consist mainly of carbon;

the third film is a silicon compound which consists mainly of Si—

N bonds; and

the fourth film is one of an epoxy resin and a polyimide resin.

21. The device according to claim 1, wherein the function element includes an electrode movable in the cavity.

22. The device according to claim 21, wherein the function element is constituted by a micro electro mechanical system (MEMS).

13. An electrical device comprising:

a substrate including a functional element;

an insulating first film configured to form on the substrate, the insulating first film forming a cavity containing the functional element and including a plurality of through-holes, the cavity including a space between the insulating first film and the functional element;

an insulating second film configured to form in the through-holes, the second film covering each of the plurality of the through-holes and having a gas permeability higher than that of the first film;

an insulating third film configured to form on the first and the second films, the third film having a gas permeability lower than that of the second film, the insulating third film being in contact with the insulating second film; and

an insulating fourth film configured to form on the third film, the fourth film having an elasticity higher than that of the third film.

14. The device of claim 13, further comprising:

an insulating fifth film configured to cover a side surface of the second film, the fifth film having a gas permeability lower than that of the second film.

15. The device of claim 14, further comprising:

an electrode configured to form outside the second film, the electrode being electrically connected to the functional element.

16. The device of claim 15, further comprising:

wiring of which one end is connected to the functional element and of which the other end is extended outside the second film;

an organic film which is apart from the second film, covers the other end of the wiring and includes an opening corresponding to the other end of the wiring; and

a bump which is formed on the organic film surrounding the opening and is connected to the other end of the wiring.

17. The device of claim 13, wherein the first film is a silicon compound which consists mainly of Si—

O bonds;

the second film is any one of a thermosetting-type resin, an ultraviolet-curable resin and an electron-beam curing-type resin which consist mainly of carbon;

the third film is a silicon compound which consists mainly of Si—

N bonds; and

the fourth film is one of an epoxy resin and a polyimide resin.

23. The device according to claim 13, wherein the function element includes an electrode movable in the cavity.

24. The device according to claim 23, wherein the function element is constituted by a micro electro mechanical system (MEMS).

18. A method of an electrical device comprising:

forming an insulating first film having a plurality of through-holes on a substrate with a functional element, the first film forming a cavity which contains the functional element, together with the substrate, the cavity including a space between the insulating first film and the functional element;

forming an insulating second film on the first film to cover the plurality of the through-holes, the second film having a gas permeability higher than that of the first film;

discharging water vapor in the cavity to outside of the second film after formation of the second film;

forming an insulating third film on the second film after discharging the water vapor, the third film having a gas permeability lower than that of the second film, the insulating third film being in contact with the insulating second film; and

forming an insulating fourth film on the third film, the fourth film having an elasticity higher than that of the third film.

19. The method of claim 18, wherein the discharging of the water vapor is performed by a thermal process.

20. The method of claim 19, further comprising:

exposing a part of the first film by removing a part of the second film after formation of the second film, the third film being formed on the first film and the second film.

25. The method according to claim 18, wherein the function element includes an electrode movable in the cavity.

26. The method according to claim 25, wherein the function element is constituted by a micro electro mechanical system (MEMS).