Methods and systems for operating power converters
First Claim
1. A switching circuit for use in a power converter, said switching circuit comprising:
- an insulated gate bipolar transistor (IGBT) comprising a gate terminal, a collector terminal, and an emitter terminal;
a gate drive circuit electrically coupled to said gate terminal and configured to switch said IGBT on and off; and
,a temperature drift resistant clamp circuit electrically coupled between said gate terminal and said collector terminal of said IGBT, said temperature drift resistant clamp circuit configured to maintain a voltage at said collector terminal below a threshold voltage and facilitate reducing the effects of temperature on operation of said switching circuit, wherein said temperature drift resistant clamp circuit comprises;
at least one zener diode; and
,a temperature compensation circuit electrically coupled to said zener diode and comprising at least one thermistor that compensates for a change in a breakdown voltage of said zener diode due to a change in temperature.
2 Assignments
0 Petitions
Accused Products
Abstract
A switching circuit for use in a power converter is provided. The switching circuit includes an insulated gate bipolar transistor (IGBT) including a gate terminal, a collector terminal, and an emitter terminal, a gate drive circuit electrically coupled to the gate terminal and configured to switch the IGBT on and off, and, a temperature drift resistant clamp circuit electrically coupled between the gate terminal and the collector terminal of the IGBT, the temperature drift resistant clamp circuit configured to maintain a voltage at the collector terminal below a threshold voltage and facilitate reducing the effects of temperature on operation of the switching circuit.
-
Citations
12 Claims
-
1. A switching circuit for use in a power converter, said switching circuit comprising:
-
an insulated gate bipolar transistor (IGBT) comprising a gate terminal, a collector terminal, and an emitter terminal; a gate drive circuit electrically coupled to said gate terminal and configured to switch said IGBT on and off; and
,a temperature drift resistant clamp circuit electrically coupled between said gate terminal and said collector terminal of said IGBT, said temperature drift resistant clamp circuit configured to maintain a voltage at said collector terminal below a threshold voltage and facilitate reducing the effects of temperature on operation of said switching circuit, wherein said temperature drift resistant clamp circuit comprises; at least one zener diode; and
,a temperature compensation circuit electrically coupled to said zener diode and comprising at least one thermistor that compensates for a change in a breakdown voltage of said zener diode due to a change in temperature.
-
-
2. A power generation system comprising:
-
a power generator; and
,a power converter electrically coupled to said power generator, said power converter configured to convert power generated by said generator and supply the converted power to a load, wherein said power converter comprises at least one switching circuit that comprises; an insulated gate bipolar transistor (IGBT) comprising a gate terminal, a collector terminal, and an emitter terminal; a gate drive circuit electrically coupled to said gate terminal and configured to switch said IGBT on and off; and
,a temperature drift resistant clamp circuit electrically coupled between said gate terminal and said collector terminal of said IGBT, said temperature drift resistant clamp circuit configured to maintain a voltage at said collector terminal below a threshold voltage and facilitate reducing the effects of temperature on operation of said switching circuit. - View Dependent Claims (3, 4, 5, 6, 7, 8)
-
-
9. A method for reducing the effects of temperature on a switching circuit for use in a power converter, said method comprising:
-
providing an insulated gate bipolar transistor (IGBT) including a gate terminal, a collector terminal, and an emitter terminal; coupling a gate drive circuit to the gate terminal, the gate drive circuit configured to switch the IGBT on and off; and
,coupling a temperature drift resistant clamp circuit between the gate terminal and the collector terminal of the IGBT, the temperature drift resistant clamp circuit configured to maintain a voltage at the collector terminal below a threshold voltage and facilitate reducing the effects of temperature on operation of the switching circuit, the temperature drift resistant clamp circuit including a temperature compensation circuit and at least one zener diode in series. - View Dependent Claims (10, 11, 12)
-
Specification