Apparatus and methods for electrochemical processing of microfeature wafers
First Claim
1. A method for electrochemically processing a microfeature wafer, comprising:
- holding a wafer in a wafer holder in a processing zone of a vessel;
establishing an electric field in a processing fluid in the vessel using the wafer, a counter electrode in the vessel, and a supplementary electrode spaced apart from the wafer holder;
wherein the supplementary electrode affects the electric field via a supplementary virtual electrode in the processing zone, and the supplementary electrode comprises an inclined annular ring oriented at a non-zero angle relative to the supplementary virtual electrode.
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Abstract
Apparatus and methods for electrochemically processing microfeature wafers. The apparatus can have a vessel including a processing zone in which a microfeature wafer is positioned for electrochemical processing. The apparatus further includes at least one counter electrode in the vessel that can operate as an anode or a cathode depending upon the particular plating or electropolishing application. The apparatus further includes a supplementary electrode and a supplementary virtual electrode. The supplementary electrode is configured to operate independently from the counter electrode in the vessel, and it can be a thief electrode and/or a de-plating electrode depending upon the type of process. The supplementary electrode can further be used as another counter electrode during a portion of a plating cycle or polishing cycle. The supplementary virtual electrode is located in the processing zone, and it is configured to counteract an electric field offset relative to the wafer associated with an offset between the wafer and the counter electrode in the vessel when the wafer is in the processing zone.
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Citations
11 Claims
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1. A method for electrochemically processing a microfeature wafer, comprising:
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holding a wafer in a wafer holder in a processing zone of a vessel; establishing an electric field in a processing fluid in the vessel using the wafer, a counter electrode in the vessel, and a supplementary electrode spaced apart from the wafer holder; wherein the supplementary electrode affects the electric field via a supplementary virtual electrode in the processing zone, and the supplementary electrode comprises an inclined annular ring oriented at a non-zero angle relative to the supplementary virtual electrode. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9, 10, 11)
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3. The method of 1 wherein the supplementary electrode is located above the supplementary virtual electrode.
Specification