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Crystallization processing for semiconductor applications

  • US 8,313,965 B2
  • Filed: 11/23/2010
  • Issued: 11/20/2012
  • Est. Priority Date: 11/30/2009
  • Status: Active Grant
First Claim
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1. A method of reorganizing the structure of a solid material, comprising:

  • exposing a treatment zone of the solid material to a first plurality of energy pulses to progressively melt the treatment zone, forming a molten area; and

    progressively recrystallizing the molten area by directing a second plurality of energy pulses to the molten area to form a crystalline solid, wherein exposing the treatment zone to the first plurality of energy pulses comprises exposing the treatment zone to a plurality of laser pulses, the first laser pulse having an intensity lower than one or more of the succeeding laser pulses.

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