Method and structure for thin film photovoltaic materials using bulk semiconductor materials
First Claim
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1. A photovoltaic device comprising:
- a substrate;
a first electrode overlying the substrate;
a second electrode overlying the first electrode; and
a first structured material disposed over the first electrode, the first structured material having a planar first surface and an opposing second surface;
a second structured material disposed directly over the first structured material;
a third structural material disposed directly over the second structured material, the third structural material having a planar third surface and an opposing fourth surface; and
an intermixed region provided by the first structured material, the second structured material and the third structured material;
wherein the first structured material is disposed such that the planar first surface of the first structured material is in direct contact with an upper surface of the first electrode along the entire upper surface;
wherein the interface between the first structured material and second structured material comprises a contact characterized by sintered connections along the interfacial area, andwherein the planar third surface of the third structured material is in direct contact with the second electrode along an entire lower surface of the second electrode.
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Abstract
A photovoltaic device and related methods. The device has a structured material positioned between an electron collecting electrode and a hole collecting electrode. An electron transporting/hole blocking material is positioned between the electron collecting electrode and the structured material. In a specific embodiment, negatively charged carriers generated by optical absorption by the structured material are preferentially separated into the electron transporting/hole blocking material. In a specific embodiment, the structured material has an optical absorption coefficient of at least 103 cm−1 for light comprised of wavelengths within the range of about 400 nm to about 700 nm.
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Citations
20 Claims
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1. A photovoltaic device comprising:
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a substrate; a first electrode overlying the substrate; a second electrode overlying the first electrode; and a first structured material disposed over the first electrode, the first structured material having a planar first surface and an opposing second surface; a second structured material disposed directly over the first structured material; a third structural material disposed directly over the second structured material, the third structural material having a planar third surface and an opposing fourth surface; and an intermixed region provided by the first structured material, the second structured material and the third structured material; wherein the first structured material is disposed such that the planar first surface of the first structured material is in direct contact with an upper surface of the first electrode along the entire upper surface; wherein the interface between the first structured material and second structured material comprises a contact characterized by sintered connections along the interfacial area, and wherein the planar third surface of the third structured material is in direct contact with the second electrode along an entire lower surface of the second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 8, 9, 10)
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7. A photovoltaic device comprising:
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an electron collecting electrode; a hole collecting electrode overlying the electron collecting electrode; an electron transporting/hole blocking material positioned between the electron collecting electrode and the hole collecting electrode, wherein the electron transporting/hole blocking material comprises; a first structured material disposed over the electron collecting electrode, the first structured material having a planar first surface and an opposing second surface; a second structured material disposed directly over the first structured material; a third structural material disposed directly over the second structured material, the third structural material having a planar third surface and an opposing fourth surface; and an intermixed region provided by the first structured material, the second structured material and the third structured material; wherein the first structured material is disposed such that the planar first surface of the first structured material is in direct contact with an upper surface of the electron collecting electrode along the entire upper surface; wherein the interface between the first structured material and second structured material comprises a contact characterized by sintered connections along the interfacial area, and wherein the planar third surface of the third structured material is in direct contact with the hole collecting electrode along an entire lower surface of the hole collecting electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification