Semiconductor device with multiple component oxide channel

• US 8,314,420 B2
• Filed: 03/12/2004
• Issued: 11/20/2012
• Est. Priority Date: 03/12/2004
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Hoffman, Randy L., Herman, Gregory S., Mardilovich, Peter P.
• Primary Examiner(s): Kraig, William F
• Application Number:
  US10/799,961
• Publication Number:
  US 20050199961A1
• Time in Patent Office: 3,175 Days
• Field of Search: 257/43, 257/613, 257/616, 257/59, 257/72, 257/E29.068, 257/347, 257/63, 257/E29.086, 438/96, 438/482, 438/85, 438/104
• US Class Current: 257/43
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula A_xB_xO_x wherein each A is selected from the group of Ga, In, each B is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Claims

1. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula A_xB_xO_x, wherein each of the one or more compounds consists of three elements with the formula A_xB_xO_x, wherein the one or more compounds includes one or more of gallium-germanium oxide, gallium-tin oxide, gallium-lead oxide, indium-germanium oxide, indium-lead oxide, each O is atomic oxygen, where each x is a non-zero number, but the value of “

x”

for each constituent element may be different, wherein the channel includes one of an amorphous form and a mixed-phase crystalline form; and

a gate dielectric positioned between a gate electrode and the channel.

2. The semiconductor device of claim 1, wherein the one or more compounds of the formula A_xB_xO_x includes an atomic composition of metal (A)-to-metal (B) ratio of A:

B, wherein proportions of A, and B, based on stoichiometric x values associated with A, and B, are each in a range of about 0.05 to about 0.95.

3. A semiconductor device, comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula A_xB_xO_x, wherein the one or more compounds of the formula A_xB_xO_x includes one or more of gallium-germanium oxide, gallium-tin oxide, gallium-lead oxide, indium-germanium oxide, indium-lead oxide, each O is atomic oxygen, where each x is a non-zero number, but the value of “

x”

for each constituent element may be different, wherein the channel includes one of an amorphous form and a mixed-phase crystalline form; and

a gate dielectric positioned between a gate electrode and the channel;

wherein the one or more compounds of the formula A_xB_xO_x includes C_x, to form a compound of the formula A_xB_xC_xO_x, wherein each C is selected from the group of Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and wherein each of A, B, and C are different.

4. The semiconductor device of claim 3, wherein the one or more compounds of the formula A_xB_xC_xO_x includes an atomic composition of metal (A)-to-metal (B)-to-metal (C) ratio of A:

B;

C, wherein proportions of A, B, and C, based on stoichiometric x values associated with A, B, and C, are each in a range of about 0.025 to about 0.95.

5. The semiconductor device of claim 3, wherein the one or more compounds of the formula A_xB_xC_xO_x includes one or more of gallium-germanium-tin oxide, gallium-tin-lead oxide, gallium-germanium-lead oxide, gallium-indium-germanium oxide, gallium-indium-tin oxide, gallium-indium-lead oxide, indium-germanium-tin oxide, indium-tin-lead oxide, indium-germanium-lead oxide.

6. The semiconductor device of claim 5, wherein the one or more compounds of the formula A_xB_xC_xO_x includes an atomic composition of metal (A)-to-metal (B)-to-metal (C) ratio A:

B;

C, wherein proportions of A, B, and C, based on stoichiometric x values associated with A, B, and C, are each in a range of about 0.025 to about 0.95.

7. The semiconductor device of claim 3, wherein the one or more compounds of formula A_xB_xC_xO_x, includes D_x, to form a compound of the formula A_xB_xC_xD_xO_x, wherein each D is selected from the group of Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and wherein each of A, B, C, and D are different.

8. The semiconductor device of claim 7, wherein the one or more compounds of the formula A_xB_xC_xD_xO_x includes an atomic composition of metal (A)-to-metal (B)-to-metal (C)-to-metal (D) ratio of A:

B;

C;

D, wherein proportions of A, B, C, and D, based on stoichiometric x values associated with A, B, C, and D, are each in a range of about 0.017 to about 0.95.

9. The semiconductor device of claim 7, wherein the one or more compounds of the formula A_xB_xC_xD_xO_x includes one or more of gallium-germanium-tin-lead oxide, gallium-indium-germanium-tin oxide, gallium-indium-germanium-lead oxide, gallium-indium-tin-lead oxide, indium-germanium-tin-lead oxide.

10. The semiconductor device of claim 9, wherein the one or more compounds of the formula A_xB_xC_xD_xO_x includes an atomic composition of metal (A)-to-metal (B)-to-metal (C)-to-metal (D) ratio A:

B;

C;

D, wherein proportions of A, B, C, and D, based on stoichiometric x values associated with A, B, C, and D, are each in a range of about 0.017 to about 0.95.

11. The semiconductor device of claim 7, wherein the one or more compounds of formula A_xB_xC_xD_xO_x includes E_x, to form a compound of the formula A_xB_xC_xD_xE_xO_x, wherein each E is selected from the group of Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and wherein each of A, B, C, D, and E are different.

12. The semiconductor device of claim 11, wherein the one or more compounds of the formula A_xB_xC_xD_xE_xO_x includes an atomic composition of metal (A)-to-metal (B)-to-metal (C)-to-metal (D) ratio of A:

B;

C;

D;

E, wherein proportions of A, B, C, D, and E, based on stoichiometric x values associated with A, B, C, D and E, are each in a range of about 0.013 to about 0.95.

13. The semiconductor device of claim 11, wherein the one or more compounds of the formula A_xB_xC_xD_xE_xO_x includes one or more of gallium-indium-germanium-tin-lead oxide.

14. The semiconductor device of claim 13, wherein the gallium-indium-germanium-tin-lead oxide includes an atomic composition of metal (A)-to-metal (B)-to-metal (C)-to-metal (D)-to-metal (E) ratio A:

B;

C;

D;

E, wherein proportions of A, B, C, D, and E, based on stoichiometric x values associated with A, B, C, D and E, are each in a range of about 0.013 to about 0.95.

15. A semiconductor device formed by the steps, comprising:

providing a drain electrode;

providing a source electrode;

providing a precursor composition including one or more precursor compounds that each consist of three elements, wherein the one or more compounds are of the formula A_xB_xO_x and include one or more of gallium-germanium oxide, gallium-tin oxide, gallium-lead oxide, indium-germanium oxide, indium-lead oxide, where each x is a non-zero number, but the value of “

x”

for each constituent element may be different, wherein the channel includes one of an amorphous form and a mixed-phase crystalline form;

depositing a channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

16. The semiconductor device of claim 15, wherein providing the source, the drain, and the gate electrodes includes providing a substantially transparent form of the source, the drain, and the gate electrodes.

17. The semiconductor device of claim 15, wherein providing the precursor composition includes providing a liquid form of the precursor composition.

18. The semiconductor device of claim 17, wherein depositing the channel includes an ink jet deposition technique when the precursor composition includes the liquid form.

19. A semiconductor device formed by the steps, comprising:

providing a drain electrode;

providing a source electrode;

providing a precursor composition including one or more precursor compounds that include A_x and one or more compounds that include B_x, wherein the one or more compounds of the formula A_xB_xO_x includes one or more of gallium-germanium oxide, gallium-tin oxide, gallium-lead oxide, indium-germanium oxide, indium-lead oxide, where each x is a non-zero number, but the value of “

x”

for each constituent element may be different, wherein the channel includes one of an amorphous form and a mixed-phase crystalline form;

depositing a channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel;

wherein the one or more precursor compounds includes one or more precursor compounds that include C_x, wherein each C is selected from the group of Ga, In, Ge, Sn, Pb, each x is independently a non-zero number, and wherein each of A, B, and C are different.

20. The semiconductor device of claim 19, wherein the one or more precursor compounds includes one or more precursor compounds that include D_x, wherein each D is selected from the group of Ga, In, Ge, Sn, Pb, each x is independently a non-zero number, and wherein each of A, B, C, and D are different.

21. The semiconductor device of claim 20, wherein the one or more precursor compounds includes one or more precursor compounds that include E_x, wherein each E is selected from the group of Ga, In, Ge, Sn, Pb, each x is independently a non-zero number, and wherein each of A, B, C, D, and E are different.

22. The semiconductor device of claim 21, wherein depositing the channel includes vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, ion beam sputtering.

23. A display device, comprising:

a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including;

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds each consisting of three elements of the formula A_xB_xO_x, wherein the one or more compounds of the formula A_xB_xO_x includes one or more of gallium-germanium oxide, gallium-tin oxide, gallium-lead oxide, indium-germanium oxide, indium-lead oxide, each O is atomic oxygen, where each x is a non-zero number, but the value of “

x”

for each constituent element may be different, wherein the channel includes one of an amorphous form and a mixed-phase crystalline form;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.

24. The display of claim 23, wherein the source, the drain, and the gate electrodes include a substantially transparent material.

25. The display of claim 23, wherein the one or more compounds of the formula A_xB_xO_x includes an atomic composition of metal (A)-to-metal (B) of ratio A:

B, wherein proportions of A, and B, based on stoichiometric x values associated with A, and B, are each in a range of about 0.05 to about 0.95.

26. A display device, comprising:

a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including;

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula A_xB_xO_x, wherein the one or more compounds of the formula A_xB_xO_x includes one or more of gallium-germanium oxide, gallium-tin oxide, gallium-lead oxide, indium-germanium oxide, indium-lead oxide, each O is atomic oxygen, where each x is a non-zero number, but the value of “

x”

for each constituent element may be different, wherein the channel includes one of an amorphous form and a mixed-phase crystalline form;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel;

wherein the one or more compounds of the formula A_xB_xO_x includes C_x, to form a compound of the formula A_xB_xC_xO_x, wherein each C is selected from the group of Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and wherein each of A, B, and C are different.

27. The display of claim 26, wherein the one or more compounds of the formula A_xB_xC_xO_x includes an atomic composition of metal (A)-to-metal (B)-to-metal (C) ratio A:

B;

C, wherein proportions of A, B, and C, based on stoichiometric x values associated with A, B, and C, are each in a range of about 0.025 to about 0.95.

28. The display of claim 26, wherein the one or more compounds of formula A_xB_xC_xO_x, includes D_x, to form a compound of the formula A_xB_xC_xD_xO_x, wherein each D is selected from the group of Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and wherein each of A, B, C, and D are different.

29. The display of claim 28, wherein the one or more compounds of the formula A_xB_xC_xD_xO_x includes an atomic composition of metal (A)-to-metal (B)-to-metal (C)-to-metal (D) ratio A:

B;

C;

D, wherein proportions of A, B, C, and D, based on stoichiometric x values associated with A, B, C, and D, are each in a range of about 0.017 to about 0.95.

30. The display of claim 28, wherein the one or more compounds of formula A_xB_xC_xD_xO_x includes E_x, to form a compound of the formula A_xB_xC_xD_xE_xO_x, wherein each E is selected from the group of Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and wherein each of A, B, C, D, and E are different.

31. The display of claim 30, wherein the one or more compounds of the formula A_xB_xC_xD_xE_xO_x includes an atomic composition of metal (A)-to-metal (B)-to-metal (C)-to-metal (D)to-metal (E) ratio A:

B;

C;

D;

E, wherein proportions of A, B, C, D, and E, based on stoichiometric x values associated with A, B, C, D, and E, are each in a range of about 0.013 to about 0.95.