Thin film transistors and circuits with metal oxynitride active channel layers

• US 8,314,421 B2
• Filed: 06/01/2009
• Issued: 11/20/2012
• Est. Priority Date: 06/01/2009
• Status: Active Grant

• Current Assignee: Chunong Qiu, Cindy X. Qiu, Ishiang Shih, Yi-Chi Shih
• Original Assignee: Chunong Qiu, Cindy X. Qiu, Ishiang Shih, Yi-Chi Shih
• Inventors: Qiu, Cindy X., Shih, Yi-Chi, Qiu, Chunong, Shih, Ishiang
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): HENRY, CALEB E
• Application Number:
  US12/455,286
• Publication Number:
  US 20100301343A1
• Time in Patent Office: 1,268 Days
• Field of Search: 257/43
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Thin film transistors and circuits having improved mobility and stability are disclosed in this invention to have metal oxynitrides as the active channel layers. In one embodiment, the charge carrier mobility in the thin film transistors is increased by using the metal oxynitrides as the active channel layers. In another embodiment, a thin film transistor having a p-type metal oxynitride active channel layer and a thin film transistor having an n-type metal oxynitride active channel layer are fabricated to forming a CMOS circuit. In yet another embodiment, thin film transistor circuits having metal oxynitrides as the active channel layers are provided.

Claims

1. A manufacture method of a metal oxynitride thin film transistor with improved charge carrier mobility comprising the steps of:

providing a first substrate;

forming a first gate electrode over said first substrate;

forming a first gate insulating layer, said first gate insulating layer overlaps at least a portion of said first gate electrode;

forming a source electrode, said source electrode overlaps a first portion of said first gate insulating layer;

forming a drain electrode, said drain electrode overlaps a second portion of said first gate insulating layer; and

forming at least a first metal oxynitride active channel layer, said first metal oxynitride active channel layer overlaps at least a portion of said first gate insulating layer, at least a portion of said source electrode and at least a portion of said drain electrode, wherein said charge carry mobility of said first metal oxynitride active channel layer is controlled by controlling metal content and nitrogen to oxygen ratio in said first metal oxynitride active channel layer during said active channel layer deposition.

2. A manufacture method of a metal oxynitride thin film transistor with improved charge carrier mobility as defined in claim 1, wherein said first substrate is selected from a group comprising:

glass substrate, silica substrates, plastic sheets, metallic sheet with dielectric coating, ceramic substrates and semiconducting substrates with dielectric coating.

3. A manufacture method of a metal oxynitride thin film transistor with improved charge carrier mobility as defined in claim 1, wherein material of said metal oxynitride active channel layer is selected from a group comprising:

indium oxynitride, zinc oxynitride, tin oxynitride, gallium oxynitride, titanium oxynitride, germanium oxynitride, silicon oxynitride and their mixtures.

4. A manufacture method of a metal oxynitride thin film transistor with improved charge carrier mobility as defined in claim 1, wherein said first metal oxynitride active channel layer is formed by a method comprising:

thermal evaporation, reactive evaporation, sputtering, reactive sputtering, CVD, and PECVD.

5. A manufacture method of a metal oxynitride thin film transistor with improved charge carrier mobility as defined in claim 1, wherein said charge carrier mobility of said metal oxynitride active channel layer is further controlled by deposition conditions and post thermal treatment of said first metal oxynitride active channel layer.

6. A manufacture method of a metal oxynitride thin film transistor with improved charge carrier mobility as defined in claim 1, wherein conducting type of said metal oxynitride active channel layer is controlled by adjusting metal content and nitrogen to oxygen ratio in said first metal oxynitride active channel layer during said active channel layer deposition.

7. A manufacture method of a metal oxynitride thin film transistor with improved charge carrier mobility as defined in claim 1, wherein said first gate insulating layer is a material selected from a group of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, hafnium oxide, strontium titanate, and their combinations.

8. A manufacture method of a metal oxynitride thin film transistor with improved charge carrier mobility as defined in claim 1, further comprising a step of forming a passivation layer for protection of said first metal oxynitride active channel layer.

9. A manufacture method of a CMOS circuit with improved charge carrier mobility comprising the steps of:

forming a first p-channel metal oxynitride thin film transistor having at least a p-type metal oxynitride active channel layer, a first gate electrode, a first gate insulator, a first source electrode, and a first drain electrode, said charge carrier mobility of said p-type metal oxynitride active channel layer is controlled by controlling metal content and nitrogen to oxygen ratio in said p-type metal oxynitride active channel layer during said p-type active channel layer deposition, and

forming a second n-channel metal oxynitride thin film transistor having at least a n-type metal oxynitride active channel layer, a second gate electrode, a second gate insulator, a second source electrode, and a second drain electrode, said charge carrier mobility of said n-type metal oxynitride active channel layer is controlled by controlling metal content and nitrogen to oxygen ratio in said n-type metal oxynitride active channel layer during said n-type active channel layer deposition,

wherein said first gate electrode is connected to said second gate electrode and first drain electrode is connected to said second drain electrode.

10. A manufacture method of a CMOS circuit with improved charge carrier mobility as defined in claim 9, wherein material of said p-type and n-type metal oxynitride active channel layer is selected from a group comprising:

indium oxynitride, zinc oxynitride, tin oxynitride, gallium oxynitride, titanium oxynitride, germanium oxynitride, silicon oxynitride and their mixtures.

11. A manufacture method of a CMOS circuit with improved charge carrier mobility as defined in claim 9, wherein conducting type of said p-channel and n-channel is controlled by controlling metal content and oxygen to nitrogen ratio of said metal oxynitride active channel layer during said active channel layer deposition.

12. A manufacture method of a CMOS circuit with improved charge carrier mobility as defined in claim 9, further comprising a step of forming a first passivation layer for protection of said p-type metal oxynitride active channel layer and a second passivation layer for protection of said n-type metal oxynitride active channel layer.

13. A manufacture method of a circuit of metal oxynitride thin film transistors with improved charge carrier mobility comprising the steps of forming a plurality of thin film transistors, each with at least a metal oxynitride active channel layer, wherein said charge carrier mobility of said plurality of thin film transistors is controlled by controlling metal content and oxygen to nitrogen ratio in each said metal oxynitride active channel layer during said active channel layer deposition.

14. A manufacture method of a circuit of metal oxynitride thin film transistors with improved charge carrier mobility as defined in claim 13, wherein material of said metal oxynitride active channel layer is selected from a group comprising:

indium oxynitride, zinc oxynitride, tin oxynitride, gallium oxynitride, titanium oxynitride, germanium oxynitride, silicon oxynitride and their mixtures.

15. A manufacture method of a circuit of metal oxynitride thin film transistors with improved charge carrier mobility as defined in claim 13, where conducting type of each said metal oxynitride active channel layer of said thin film transistors is controlled by controlling metal content and oxygen to nitrogen ratio of said each metal oxynitride active channel layer.

16. A manufacture method of a circuit of metal oxynitride thin film transistors with improved charge carrier mobility as defined in claim 13, said circuit is for optical sensor.

17. A manufacture method of a circuit of metal oxynitride thin film transistors with improved charge carrier mobility as defined in claim 13, said circuit is for rf identification tag applications.

18. A manufacture method of a circuit of metal oxynitride thin film transistors with improved charge carrier mobility as defined in claim 13, said circuit is for microwave applications.

19. A manufacture method of a circuit of metal oxynitride thin film transistors with improved charge carrier mobility as defined in claim 13, said circuit is for electronic displays.