Field-effect transistor using amorphouse oxide
First Claim
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1. A field-effect transistor comprising at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate,wherein the channel layer comprises an oxide material that contains at least In and B, andwherein the oxide material has an element ratio B/(In +B) of 0.1 or higher and 0.29 or lower.
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Abstract
A field-effect transistor includes at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate. The channel layer is made of an amorphous oxide material that contains at least In and B, and the amorphous oxide material has an element ratio B/(In+B) of 0.05 or higher and 0.29 or lower.
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10 Claims
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1. A field-effect transistor comprising at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate,
wherein the channel layer comprises an oxide material that contains at least In and B, and wherein the oxide material has an element ratio B/(In +B) of 0.1 or higher and 0.29 or lower.
Specification