Nonvolatile nano-electromechanical system device

• US 8,314,983 B2
• Filed: 11/10/2009
• Issued: 11/20/2012
• Est. Priority Date: 11/10/2009
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Frank, David J., Cohen, Guy
• Primary Examiner(s): CHERRY, EUNCHA P
• Application Number:
  US12/615,358
• Publication Number:
  US 20110109952A1
• Time in Patent Office: 1,106 Days
• Field of Search: 359/221.1, 359/212, 359/1, 359/223
• US Class Current: 359/221.1
• CPC Class Codes: B81B 2201/018 Switches not provided for in B81B2201/014 - B81B2201/016
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 2207/053 of movable structures
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
• CPC Class Codes: Y10T 29/49002 Electrical device making

Abstract

A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

Claims

1. A nonvolatile nano-electromechanical system device, comprising:

a cantilever structure, including a beam supported at one end thereof by a supporting base; and

a beam deflector, including a phase change material (PCM), the PCM being adhesively disposed on a portion of the beam in a non-slip condition with a material of the beam and being configured to take one of an amorphous phase or a crystalline phase and to deflecting the beam from an initial shape thereof when taking the crystalline phase.

2. The device according to claim 1, wherein the beam comprises silicon nitride and the PCM comprises Germanium-Antimony-Tellurium (GST).

3. The device according to claim 1, further comprising a substrate on which the supporting base is disposed, the beam being substantially parallel with a face of the substrate with the PCM taking the amorphous phase.

4. The device according to claim 3, wherein the PCM is adhesively disposed on a face of the beam facing away from the substrate, the PCM being configured to deflect the beam away from the substrate when taking the crystalline phase.

5. The device according to claim 1, wherein the PCM exhibits a 4-9% volume change upon crystallization from the amorphous phase.

7. A system, comprising the device according to claim 1 and a controller coupled to the beam deflector to control the PCM to take the one of the amorphous or the crystalline phase.

8. The system according to claim 7, further comprising a power source to provide power to the system only when a phase of the PCM changes.

9. The system according to claim 7, further comprising an external controller disposed in signal communication with the controller, the external controller signaling the controller as to whether the beam is to be deflected.

10. The system according to claim 7, wherein the controller is configured to melt the PCM at first and second rates to induce the PCM to take the amorphous or the crystalline phase, respectively.

11. The system according to claim 7, wherein the controller comprises at least one of a circuit configured to pass current through the PCM, a resistive heater and a laser.

12. The system according to claim 7, wherein a deflection of the beam is resistively and optically readable.

6. A nonvolatile nano-electromechanical system device, comprising:

a cantilever structure, including a beam supported at one end thereof by a supporting base; and

a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from an initial shape thereof when taking the crystalline phase,

wherein the beam deflector is plural in number and is disposed at one or more portions of the beam.

13. A system, comprising:

a plurality of nonvolatile nano-electromechanical system devices, each device comprising;

a cantilever structure, including a beam supported at one end thereof by a supporting base, and

a beam deflector, including a phase change material (PCM), the PCM being adhesively disposed on a portion of the beam in a non-slip condition with a material of the beam and being configured to take one of an amorphous phase or a crystalline phase and to deflect the beam from an initial shape thereof when taking the crystalline phase; and

a controller coupled to each of the beam deflectors to selectively control the PCM of each to take the one of the amorphous or the crystalline phase.

14. A reflective display comprising:

a plurality of pixels including an array of red-green-blue (RGB) dots; and

a plurality of nonvolatile nano-electromechanical system devices, each device comprising a cantilever structure, including a beam supported at one end thereof by a supporting base, and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from an initial shape thereof when taking the crystalline phase; and

a controller coupled to each of the beam deflectors to selectively control the PCM of each to take the one of the amorphous or the crystalline phase,

wherein discrete ones of the devices are individually controlled by the controller.

15. The reflective display according to claim 14, wherein the discrete ones of the devices are controlled digitally or analogically.

16. The reflective display according to claim 14, wherein the discrete ones of the devices only draw power during a change in phase of the PCM.

17. A programmable stepper mask for lithography comprising:

a plurality of nonvolatile nano-electromechanical system devices, each device comprising a cantilever structure, including a beam supported at one end thereof by a supporting base, and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from an initial shape thereof when taking the crystalline phase; and

a controller coupled to each of the beam deflectors to individually control each of the plurality of the devices by selectively controlling the PCM of each to take the one of the amorphous or the crystalline phase.