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Selective memory cell program and erase

  • US 8,315,093 B2
  • Filed: 02/15/2012
  • Issued: 11/20/2012
  • Est. Priority Date: 08/19/2009
  • Status: Active Grant
First Claim
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1. A method of operating non-volatile storage comprising single-level blocks and multi-level blocks, the single-level blocks each including a plurality of word lines and a plurality of non-volatile storage elements, the method comprising:

  • erasing non-volatile storage elements associated with all word lines in a first block of the single-level blocks;

    programming data in a first group of the non-volatile storage elements in the first block of the single-level blocks without programming non-volatile storage elements associated with a second group the non-volatile storage elements in the first block of the single-level blocks;

    transferring the data from the first group of non-volatile storage elements to one or more of the multi-level cell blocks while the second group of non-volatile storage elements associated remain unprogrammed; and

    erasing the data in the non-volatile storage elements associated with at least the first group of non-volatile storage elements.

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