Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates

• US 8,318,531 B2
• Filed: 11/09/2011
• Issued: 11/27/2012
• Est. Priority Date: 09/30/2008
• Status: Expired due to Fees

• Current Assignee: Stion Corporation
• Original Assignee: Stion Corporation
• Inventors: Wieting, Robert D.
• Primary Examiner(s): Garber, Charles
• Assistant Examiner(s): Abdelaziez, Yasser
• Application Number:
  US13/292,718
• Publication Number:
  US 20120122321A1
• Time in Patent Office: 384 Days
• Field of Search: None
• US Class Current: 438/95
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/03923 including AIBIIICVI compound materials, e.g. CIS, CIGS
• CPC Class Codes: H01L 31/1876 Particular processes or apparatus for batch treatment of the devices
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

thermal management for large scale processing of CIS and/or CIGS based thin film is described. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, to at least initiate formation of a copper indium diselenide film.

Claims

1. A method for fabricating a copper indium diselenide semiconductor film comprising:

providing a plurality of substrates, each of the substrates having a copper and indium composite structure;

transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, wherein N is greater than 5;

introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350°

C. to about 450°

C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates;

removing at least residual selenide species from the furnace;

introducing a sulfide species into the furnace; and

increasing a temperature to a third temperature, the third temperature ranging from about 500 to 525°

C. while the plurality of substrates are maintained in an environment including a sulfur species to extract out one or more selenium species from the copper indium diselenide film;

wherein the introducing of the sulfide species comprises back filling the furnace while holding the furnace at the second temperature.

2. The method of claim 1 wherein the copper and indium composite structure comprises a copper layer and an indium layer of material.

3. The method of claim 1 wherein a first amount of the selenium is replaced by a second amount of sulfur at the copper indium diselenide film.

4. The method of claim 3 wherein the first amount is about 5%.

5. The method of claim 1 wherein the copper and indium composites structure forms a copper indium alloy material in the furnaces.

6. The method of claim 1 further comprising a gallium layer.

7. The method of claim 1 further comprising maintaining a substantially constant pressure level within the furnace.

8. The method of claim 7 wherein the constant pressure level is about 600 to 700 torr.

9. The method of claim 1 wherein the substrates are stabilized during the period of time.

10. The method of claim 1 further comprising depositing ZnO material.

11. The method of claim 1 further comprising sputtering the copper material on the substrates.

12. The method of claim 1 further comprising evaporating the copper material on the substrates.

13. The method of claim 1 wherein the second temperature ranges from about 390°

C. to about 410°

C.

14. The method of claim 1 wherein the first temperature ranges from room temperature to about 100°

C.

15. The method of claim 1 wherein the second temperature is maintained for about 10 to 60 minutes.

16. The method of claim 1 wherein the selenide species comprises H₂Se gas.

17. The method of claim 1 wherein the carrier gas comprises nitrogen gas.

18. The method of claim 1 wherein the sulfide species comprise H₂S gas.

19. The method of claim 1 wherein each of the substrates is maintained in substantially a planar configuration free from warp or damage.

20. The method of claim 1 wherein the substrates further comprises gallium material.

21. The method of claim 1 further comprising maintaining the temperature at about the second temperature for a period of time.