Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
First Claim
1. A method for fabricating a copper indium diselenide semiconductor film comprising:
- providing a plurality of substrates, each of the substrates having a copper and indium composite structure;
transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, wherein N is greater than 5;
introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350°
C. to about 450°
C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates;
removing at least residual selenide species from the furnace;
introducing a sulfide species into the furnace; and
increasing a temperature to a third temperature, the third temperature ranging from about 500 to 525°
C. while the plurality of substrates are maintained in an environment including a sulfur species to extract out one or more selenium species from the copper indium diselenide film;
wherein the introducing of the sulfide species comprises back filling the furnace while holding the furnace at the second temperature.
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Accused Products
Abstract
thermal management for large scale processing of CIS and/or CIGS based thin film is described. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, to at least initiate formation of a copper indium diselenide film.
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Citations
21 Claims
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1. A method for fabricating a copper indium diselenide semiconductor film comprising:
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providing a plurality of substrates, each of the substrates having a copper and indium composite structure; transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, wherein N is greater than 5; introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350°
C. to about 450°
C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates;removing at least residual selenide species from the furnace; introducing a sulfide species into the furnace; and increasing a temperature to a third temperature, the third temperature ranging from about 500 to 525°
C. while the plurality of substrates are maintained in an environment including a sulfur species to extract out one or more selenium species from the copper indium diselenide film;wherein the introducing of the sulfide species comprises back filling the furnace while holding the furnace at the second temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification