Utilizing aperture with phase shift feature in forming microvias

• US 8,318,536 B2
• Filed: 12/31/2007
• Issued: 11/27/2012
• Est. Priority Date: 12/31/2007
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Li, Yonggang
• Primary Examiner(s): Garber, Charles
• Assistant Examiner(s): ABDELAZIEZ, YASSER A
• Application Number:
  US11/967,862
• Publication Number:
  US 20090170239A1
• Time in Patent Office: 1,793 Days
• Field of Search: None
• US Class Current: 438/106
• CPC Class Codes: B23K 2101/35 Surface treated articles
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 2103/08 Non-ferrous metals or alloys
• CPC Class Codes: B23K 2103/172 wherein at least one of the layers is non-metallic
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 2103/52 Ceramics
• CPC Class Codes: B23K 26/066 by using masks
• CPC Class Codes: B23K 26/382 by boring
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins

Abstract

A method, comprises drilling a set of one or more microvias in a semiconductor package with an aperture, wherein drilling the set of microvias comprises to use an aperture that has a phase shift region to reduce a spot size of a drilling beam that is used to form the set of microvias.

Claims

1. A method, comprising:

drilling a set of one or more microvias in a semiconductor package with an aperture;

wherein drilling the set of microvias comprises to use the aperture that has a base layer with an opening formed in the base layer, wherein the aperture further comprises an opaque layer formed on the base layer and a phase shift region formed in the opaque layer such that the phase shift region is adjacent to and surrounding the opening in the base layer.

2. The method of claim 1, wherein the phase shift layer comprises a dielectric layer that is partially transmissive to the first drilling beam.

3. The method of claim 1, wherein the aperture further comprises a region that is opaque to the first drilling beam and surrounds the phase shift layer.

4. The method of claim 1, wherein the base layer comprises a first opaque region and a second opaque region that are opaque to the first drilling beam, wherein the phase shift layer is between the first opaque region and a second opaque region.

5. The method of claim 1, wherein the phase shift layer is to shift the phase of the first drilling beam to provide a destructive interference between the first drilling beam and a second drilling beam that is to pass through the opening.

6. The method of claim 1, wherein a spacing between the opening and the phase shift layer equals to zero.

7. The method of claim 5, wherein a spacing between the opening and the phase shift layer is to provide the destructive interference, and wherein an opaque coating is formed on the base layer.

8. The method of claim 1, wherein the phase shift layer has a thickness to provide the reversed phase.

9. The method of claim 1, wherein the phase shift layer is to shift the phase of the first drilling beam by around 180°

±

360°

*N in phase, wherein N is an integer.

10. The method of claim 1, wherein the phase shift layer has a thickness that is to provide the reversed phase.

11. The method of claim 1, wherein the phase shift layer comprises a thickness that is determined based on a wavelength of the drilling beam.

12. The method of claim 1, wherein the phase shift layer is provided on a wall of the opening.