Enhancing MOSFET performance by optimizing stress properties
First Claim
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1. A method for improving performance of a semiconductor device, comprising:
- forming gate structures on a substrate having a spacing therebetween, the gate structures being formed in an operative relationship with active areas formed in the substrate;
forming a stress liner on the gate structures; and
applying an angled ion implantation such that ions are directed at vertical surfaces of the stress liner wherein portions of the stress liner in contact with the active areas are shielded from the ions due to a shadowing effect provided by a height and spacing between adjacent structures.
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Abstract
A device and method for improving performance of a transistor includes gate structures formed on a substrate having a spacing therebetween. The gate structures are formed in an operative relationship with active areas fainted in the substrate. A stress liner is formed on the gate structures. An angled ion implantation is applied to the stress liner such that ions are directed at vertical surfaces of the stress liner wherein portions of the stress liner in contact with the active areas are shielded from the ions due to a shadowing effect provided by a height and spacing between adjacent structures.
14 Citations
17 Claims
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1. A method for improving performance of a semiconductor device, comprising:
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forming gate structures on a substrate having a spacing therebetween, the gate structures being formed in an operative relationship with active areas formed in the substrate; forming a stress liner on the gate structures; and applying an angled ion implantation such that ions are directed at vertical surfaces of the stress liner wherein portions of the stress liner in contact with the active areas are shielded from the ions due to a shadowing effect provided by a height and spacing between adjacent structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for improving performance of a transistor, comprising:
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forming gate structures on a substrate having a spacing therebetween, the gate structures being formed in an operative relationship with active areas formed in the substrate; forming dummy structures at a periphery of an array of the gate structures; forming a stress liner on the gate structures and the dummy structures, the stress liner including vertically disposed portions on sidewalls of the gate structures and dummy structures; and applying an angled ion implantation such that ions are directed at the vertically disposed portions of the stress liner wherein portions of the stress liner in contact with the active areas are shielded from the ions due to a shadowing effect provided by a height and spacing between adjacent structures. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification