Micro-electromechanical system devices
First Claim
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1. A method of manufacturing a semiconductor chip comprising MEMS devices, the method comprising:
- forming a semiconductive layer over a substrate, the substrate comprising a buried oxide layer;
forming a first trench in the semiconductive layer, the first trench exposing the buried oxide layer;
forming an insulating material layer over a first sidewall and an opposite second sidewall of the first trench and exposed buried oxide layer;
filling the first trench with a conductive material; and
forming an air gap by removing the insulating material layer from the second sidewall, the air gap being formed around top and bottom surfaces of the semiconductive layer.
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Abstract
Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.
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Citations
10 Claims
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1. A method of manufacturing a semiconductor chip comprising MEMS devices, the method comprising:
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forming a semiconductive layer over a substrate, the substrate comprising a buried oxide layer; forming a first trench in the semiconductive layer, the first trench exposing the buried oxide layer; forming an insulating material layer over a first sidewall and an opposite second sidewall of the first trench and exposed buried oxide layer; filling the first trench with a conductive material; and forming an air gap by removing the insulating material layer from the second sidewall, the air gap being formed around top and bottom surfaces of the semiconductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a semiconductor chip comprising a MEMS device, the method comprising:
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epitaxially growing a lightly doped first semiconductive layer over a substrate, the substrate comprising a buried oxide layer; doping the first semiconductive layer to form a first highly doped region; epitaxially growing a lightly doped second semiconductive layer on the first semiconductive layer; forming first and second trenches in the first and second semiconductive layers, the first and second trenches exposing the buried oxide layer; forming an insulating layer over the first and second trenches, wherein the insulating layer fills the second trench; filling the first trench with a conductive material; and forming an air gap in the first trench by removing the insulating layer, the air gap being formed on a top surface of the second semiconductive layer and a top surface of the substrate.
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Specification