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Micro-electromechanical system devices

  • US 8,318,581 B2
  • Filed: 11/18/2011
  • Issued: 11/27/2012
  • Est. Priority Date: 06/04/2008
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor chip comprising MEMS devices, the method comprising:

  • forming a semiconductive layer over a substrate, the substrate comprising a buried oxide layer;

    forming a first trench in the semiconductive layer, the first trench exposing the buried oxide layer;

    forming an insulating material layer over a first sidewall and an opposite second sidewall of the first trench and exposed buried oxide layer;

    filling the first trench with a conductive material; and

    forming an air gap by removing the insulating material layer from the second sidewall, the air gap being formed around top and bottom surfaces of the semiconductive layer.

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