Oxide-rich liner layer for flowable CVD gapfill

• US 8,318,584 B2
• Filed: 06/03/2011
• Issued: 11/27/2012
• Est. Priority Date: 07/30/2010
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Li, DongQing, Liang, Jingmei, Ingle, Nitin K.
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): ABDELAZIEZ, YASSER A
• Application Number:
  US13/153,016
• Publication Number:
  US 20120142192A1
• Time in Patent Office: 543 Days
• Field of Search: None
• US Class Current: 438/435
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02326 into a nitride layer, e.g. changing SiN to SiON
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour

Claims