×

Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same

  • US 8,319,217 B2
  • Filed: 08/31/2010
  • Issued: 11/27/2012
  • Est. Priority Date: 12/15/2009
  • Status: Active Grant
First Claim
Patent Images

1. A method of manufacturing a thin film transistor, the method comprising:

  • forming a gate electrode on a substrate;

    forming a gate insulating layer on the gate electrode and exposed portions of the substrate;

    forming an HfInZnO-based oxide semiconductor layer having a Zn concentration gradient on the gate insulating layer; and

    forming source and drain regions respectively extending on both sides of the oxide semiconductor layer and the gate insulating layer.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×