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Magnetic tunnel junction device

DC
  • US 8,319,263 B2
  • Filed: 09/30/2010
  • Issued: 11/27/2012
  • Est. Priority Date: 03/12/2004
  • Status: Active Grant
First Claim
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1. A magnetoresistive device having a tunnel barrier junction structure, the magnetoresistive device comprising:

  • a first ferromagnetic material layer of BCC structure;

    a second ferromagnetic material layer of a BCC structure; and

    a tunnel barrier layer located between the first and second ferromagnetic material layers, andwherein the tunnel barrier layer comprises;

    a single-crystalline magnesium oxide layer in which (001) crystal plane is preferentially oriented or a poly-crystalline magnesium oxide layer in which (001) crystal plane is preferentially oriented, andwherein the tunnel barrier layer has a tunnel barrier height ω

    in a range of 0.2 to 0.5 eV.

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