Semiconductor device and driving method of the same

• US 8,320,162 B2
• Filed: 02/07/2011
• Issued: 11/27/2012
• Est. Priority Date: 02/12/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Inoue, Hiroki, Kato, Kiyoshi, Matsuzaki, Takanori, Nagatsuka, Shuhei
• Primary Examiner(s): PHUNG, ANH K
• Application Number:
  US13/022,407
• Publication Number:
  US 20110199816A1
• Time in Patent Office: 659 Days
• Field of Search: 365/149, 365/189.04, 365/189.09
• US Class Current: 365/149
• CPC Class Codes: G11C 11/24 using capacitors G11C11/22 takes precedence; using a combination of semiconductor devices and capacitors G11C11/34, e.g. G11C11/40
• CPC Class Codes: G11C 11/403 with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
• CPC Class Codes: G11C 11/405 with three charge-transfer gates, e.g. MOS transistors, per cell
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H10B 41/30 characterised by the memory core region

Abstract

An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and the number of times of writing is not limited. The semiconductor device is formed using a wide gap semiconductor and includes a potential change circuit which selectively applies a potential either equal to or different from a potential of a bit line to a source line. Thus, power consumption of the semiconductor device can be sufficiently reduced.

Claims

1. A semiconductor device comprising:

a bit line;

a source line;

a potential change circuit; and

a memory cell,

the memory cell comprising;

a first transistor comprising a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region including a first semiconductor;

a second transistor comprising a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region including a second semiconductor; and

a capacitor,

wherein the first semiconductor is different from the second semiconductor,

wherein the first gate electrode, the second drain electrode, and one of electrodes of the capacitor are electrically connected to each other to form a node which holds charge,

wherein the source line, one of terminals of the potential change circuit, and the first source electrode are electrically connected to each other,

wherein the bit line, the second source electrode, and the first drain electrode are electrically connected to each other,

wherein the potential change circuit is configured to selectively apply a first potential to the source line or a second potential to the source line, and

wherein the first potential is equal to a potential of the bit line and the second potential is different from the potential of the bit line.

2. The semiconductor device according to claim 1,

wherein the second semiconductor is an oxide semiconductor.

3. The semiconductor device according to claim 1,

wherein the potential change circuit is configured to apply the first potential to the source line, when a potential which turns the first transistor on is applied to the node.

4. A semiconductor device comprising:

a write word line;

a read word line;

a bit line;

a source line;

a potential change circuit; and

a memory cell,

the memory cell comprising;

a first transistor comprising a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region including a first semiconductor;

a second transistor comprising a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region including a second semiconductor; and

a capacitor,

wherein the first semiconductor is different from the second semiconductor,

wherein the first gate electrode, the second drain electrode, and one of electrodes of the capacitor are electrically connected to each other to form a node which holds charge,

wherein the source line, one of terminals of the potential change circuit, and the first source electrode are electrically connected to each other,

wherein the bit line, the second source electrode, and the first drain electrode are electrically connected to each other,

wherein the read word line and the other of the electrodes of the capacitor are electrically connected to each other,

wherein the write word line and the second gate electrode are electrically connected to each other, and

wherein the potential change circuit is configured to selectively apply a first potential to the source line or a second potential to the source line, and

wherein the first potential is equal to a potential of the bit line and the second potential is different from the potential of the bit line.

5. The semiconductor device according to claim 4,

wherein the second semiconductor is an oxide semiconductor.

6. The semiconductor device according to claim 4,

wherein the potential change circuit is configured to apply the first potential to the source line, when a potential which turns the first transistor on is applied to the node.

7. A method for driving a semiconductor device in which a gate electrode of a first transistor, a drain electrode of a second transistor, and one of electrodes of a capacitor are electrically connected to form a node which holds charge, comprising:

making a potential of a source electrode of the first transistor and a potential of a drain electrode of the first transistor equal to each other, when a potential which turns the first transistor on is applied to the node,

wherein the second transistor comprises a channel formation region including an oxide semiconductor.

8. The method for driving a semiconductor device according to claim 7,

wherein a channel formation region of the first transistor comprises a semiconductor material different from a semiconductor material in the channel formation region of the second transistor.

9. The method for driving a semiconductor device according to claim 7,

wherein the potential of the source electrode of the first transistor and the potential of the drain electrode of the first transistor are made equal to each other by a potential change circuit controlling a potential of a source line connected to the source electrode of the first transistor.