Magnetic booster for magnetic random access memory
First Claim
Patent Images
1. A nonvolatile magnetic memory cell, comprising:
- a switchable magnetic element;
a word line and a bit line to energize the switchable magnetic element; and
a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein;
wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line.
2 Assignments
0 Petitions
Accused Products
Abstract
Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.
-
Citations
19 Claims
-
1. A nonvolatile magnetic memory cell, comprising:
-
a switchable magnetic element; a word line and a bit line to energize the switchable magnetic element; and a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein;
wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. An electronic device comprising:
a nonvolatile magnetic memory cell comprising a switchable magnetic element, a word line and a bit line to energize the switchable magnetic element, and a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein;
wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line.- View Dependent Claims (9, 10, 11, 12, 13)
-
14. A method for fabricating a nonvolatile magnetic memory, the method comprising:
-
fabricating a plurality of switchable magnetic elements in an array; fabricating a plurality of intersecting word lines and bit lines to energize each switchable magnetic element; and fabricating at least one magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein;
wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line. - View Dependent Claims (15, 16, 17, 18, 19)
-
Specification