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Magnetic booster for magnetic random access memory

  • US 8,320,175 B2
  • Filed: 02/26/2010
  • Issued: 11/27/2012
  • Est. Priority Date: 02/27/2009
  • Status: Active Grant
First Claim
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1. A nonvolatile magnetic memory cell, comprising:

  • a switchable magnetic element;

    a word line and a bit line to energize the switchable magnetic element; and

    a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein;

    wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line.

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