Magnetic booster for magnetic random access memory

• US 8,320,175 B2
• Filed: 02/26/2010
• Issued: 11/27/2012
• Est. Priority Date: 02/27/2009
• Status: Active Grant

• Current Assignee: III Holdings 1, LLC (Intellectual Ventures LLC)
• Original Assignee: MagSil Corporation
• Inventors: Mani, Krishnakumar, Wilson, Jannier Maximo Roiz, Satoh, Kimihiro
• Primary Examiner(s): NGUYEN, DANG T
• Application Number:
  US12/714,401
• Publication Number:
  US 20100220524A1
• Time in Patent Office: 1,005 Days
• Field of Search: 365/171, 365/158, 365/173, 257/659, 257/213, 257/288, 257/379, 257/E21.001, 438/3
• US Class Current: 365/171
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Abstract

Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.

Claims

1. A nonvolatile magnetic memory cell, comprising:

a switchable magnetic element;

a word line and a bit line to energize the switchable magnetic element; and

a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein;

wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line.

2. The nonvolatile magnetic memory cell of claim 1, wherein the switchable magnetic element is a magnetic tunnel junction.

3. The nonvolatile magnetic memory cell of claim 1, wherein the magnetic field boosting material comprises a magnetic material.

4. The nonvolatile magnetic memory cell of claim 1, wherein the magnetic field boosting material is selected from a group consisting of Fe, Cr, and Ni.

5. The nonvolatile magnetic memory cell of claim 1, wherein the magnetic field boosting material is positioned on a sidewall of at least one of the word line and the bit line.

6. The nonvolatile magnetic memory cell of claim 1, wherein the magnetic field boosting material is positioned using a damascene process.

7. The nonvolatile magnetic memory cell of claim 1, wherein at least one of the word line and the bit line is patterned with sub etching.

8. An electronic device comprising:

a nonvolatile magnetic memory cell comprising

a switchable magnetic element,

a word line and a bit line to energize the switchable magnetic element, and

a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein;

wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line.

9. The electronic device of claim 8, wherein the switchable magnetic element is a magnetic tunnel junction.

10. The electronic device of claim 8, wherein the magnetic field boosting material comprises a magnetic material.

11. The electronic device of claim 8, wherein the magnetic field boosting material is selected from a group consisting of Fe, Cr, and Ni.

12. The electronic device of claim 8, wherein the magnetic field boosting material is positioned on a sidewall of at least one of the word line and the bit line.

13. The electronic device of claim 8, wherein at least one of the word line and the bit line is patterned with sub etching.

14. A method for fabricating a nonvolatile magnetic memory, the method comprising:

fabricating a plurality of switchable magnetic elements in an array;

fabricating a plurality of intersecting word lines and bit lines to energize each switchable magnetic element; and

fabricating at least one magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein;

wherein the magnetic field boosting material is positioned on a sidewall of a trench of at least one of the word line and the bit line.

15. The method of claim 14, wherein each switchable magnetic element in the array is a magnetic tunnel junction.

16. The method of claim 14, wherein the magnetic field boosting material comprises a magnetic material.

17. The method of claim 14, wherein the magnetic field boosting material is selected from a group consisting of Fe, Cr, and Ni.

18. The method of claim 14, wherein the magnetic field boosting material is positioned on a sidewall of at least one of the word line and the bit line.

19. The method of claim 14, wherein at least one of the word line and the bit line is patterned with sub etching.