Multipage preparation commands for non-volatile memory systems

• US 8,321,647 B2
• Filed: 08/20/2009
• Issued: 11/27/2012
• Est. Priority Date: 05/06/2009
• Status: Active Grant

• Current Assignee: Apple Inc.
• Original Assignee: Apple Inc.
• Inventors: Khmelnitsky, Vadim, Wakrat, Nir Jacob, Toelkes, Tahoma, Post, Daniel Jeffrey, Fai, Anthony
• Primary Examiner(s): Rones, Charles
• Assistant Examiner(s): CARDWELL, ERIC
• Application Number:
  US12/545,011
• Publication Number:
  US 20100287353A1
• Time in Patent Office: 1,195 Days
• Field of Search: None
• US Class Current: 711/170
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory

Abstract

Multipage preparation commands for non-volatile memory systems are disclosed. The multipage preparation commands supply data that can be used to prepare a non-volatile memory device for forthcoming multipage program operations. A host controller can use the commands ahead of a multipage program operation to optimize usage of a multipage program command. The non-volatile memory device can use the commands to configure the non-volatile memory in preparation for a subsequent operation, such as changing a command order or using the most optimized command set for the subsequent operation.

Claims

1. A method comprising:

receiving a preparation command from a host controller, the preparation command including information for preparing non-volatile memory for one or more subsequent multipage operations, the preparation command configured to be used ahead of a multipage operation to optimize usage of a multipage command associated with the multipage operation; and

configuring the non-volatile memory to prepare for a subsequent multipage operation on the non-volatile memory based on the preparation command,

where the information in the preparation command includes at least one of information associated with the multipage command, an address count associated with a number of addresses on which the multipage command is to be performed, or a number of pages that are to be accessed during the multipage operation.

2. The method of claim 1, where configuring includes changing a command order or using an optimized command set.

3. The method of claim 1, where the command is at least one of a read or program command.

4. The method of claim 1, where the command is status request command.

5. The method of claim 1, where the subsequent operation is a multipage program operation.

6. A method comprising:

sending a first command to a non-volatile memory device, the first command operable for configuring non-volatile memory of the non-volatile memory device to prepare for a subsequent operation on the non-volatile memory, the first command including information for analyzing the subsequent operation to optimize the subsequent operation;

sending a second command to the non-volatile memory device to perform the operation on the non-volatile memory; and

receiving data resulting from the operation,

where the information in the first command includes at least one of information associated with the second command, an address count associated with a number of addresses on which the second command is to be performed, or a number of pages that are to be accessed during the second operation.

7. The method of claim 6, where configuring includes changing a command order or using an optimized command set.

8. The method of claim 6, where the first command is at least one of a read or program command.

9. The method of claim 6, where the first command is status request command.

10. The method of claim 6, where the second command is a multipage program operation.

11. A device, comprising:

an interface configured for receiving a preparation command from a host controller, the preparation command including information for preparing non-volatile memory for subsequent multipage operations, the preparation command configured to be used ahead of a multipage operation to optimize usage of a multipage command associated with the multipage operation; and

a controller coupled to the interface and operable for configuring the non-volatile memory to prepare for a subsequent multipage operation on the non-volatile memory based on the preparation command,

where the information in the preparation command includes at least one of information associated with the multipage command, an address count associated with a number of addresses on which the multipage command is to be performed, or a number of pages that are to be accessed during the multipage operation.

12. The device of claim 11, where the controller configures the non-volatile memory by changing a command order or using an optimized command set.

13. The device of claim 11, where the command is at least one of a read or program command.

14. The device of claim 11, where the command is status request command.

15. The device of claim 11, where the subsequent multipage operation is a multipage program operation.

16. The device of claim 11, where the subsequent multipage operation includes a multipage program operation for programming a stride of memory blocks associated with the non-volatile memory, the stride of memory blocks including at least two memory blocks associated with different address units.

17. A system comprising:

memory storing a plurality of commands; and

a processor coupled to the memory, the processor configurable for;

sending a first command to a non-volatile memory device, the first command operable for configuring non-volatile memory of the non-volatile memory device to prepare for a subsequent operation on the non-volatile memory, the first command including information for analyzing the subsequent operation to optimize the subsequent operation;

sending a second command to the non-volatile memory device to perform the operation on the non-volatile memory; and

receiving data resulting from the operation,

where the information in the first command includes at least one of information associated with the second command, an address count associated with a number of addresses on which the second command is to be performed, or a number of pages that are to be accessed during the second operation.

18. The system of claim 17, where configuring includes changing a command order or using an optimized command set.

19. The system of claim 17, where the command is at least one of a read or program command.

20. The system of claim 17, where the command is status request command.

21. The system of claim 17, where the subsequent operation is a multipage program operation.

22. The system of claim 17, where the subsequent operation is a multipage program operation.

23. A system comprising:

means for sending a first command to a non-volatile memory device, the first command operable for configuring non-volatile memory of the non-volatile memory device to prepare for a subsequent operation on the non-volatile memory, the first command including information for analyzing the subsequent operation to optimize the subsequent operation;

means for sending a second command to the non-volatile memory device to perform the operation on the non-volatile memory; and

means for receiving data resulting from the operation,

where the information in the first command includes at least one of information associated with the second command, an address count associated with a number of addresses on which the second command is to be performed, or a number of pages that are to be accessed during the second operation.