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Single wafer apparatus for drying semiconductor substrates using an inert gas air-knife

  • US 8,322,045 B2
  • Filed: 10/12/2008
  • Issued: 12/04/2012
  • Est. Priority Date: 06/13/2002
  • Status: Active Grant
First Claim
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1. A substrate processing apparatus, comprising:

  • a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid;

    an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate, wherein the air knife apparatus includes a plurality of perforations adapted to apply the air knife; and

    a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife.

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