Micromachined accelerometer with monolithic electrodes and method of making the same

• US 8,322,216 B2
• Filed: 09/22/2009
• Issued: 12/04/2012
• Est. Priority Date: 09/22/2009
• Status: Active Grant

• Current Assignee: Duli Yu, Fangfang Feng, Kedu Han
• Original Assignee: Duli Yu, Fangfang Feng, Kedu Han
• Inventors: Yu, Duli, Feng, Fangfang, Han, Kedu
• Primary Examiner(s): Macchiarolo, Peter
• Assistant Examiner(s): Shah, Samir M
• Application Number:
  US12/564,180
• Publication Number:
  US 20110067495A1
• Time in Patent Office: 1,169 Days
• Field of Search: 735/143.2, 735/040.4, 735/142.4, 257/E21.211, 438/50
• US Class Current: 73/514.32
• CPC Class Codes: G01P 15/0888 for indicating angular acceleration
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/131 with electrostatic counterbalancing means
• CPC Class Codes: G01P 15/18 in two or more dimensions

Abstract

A capacitive accelerometer having one or more micromachined acceleration sensor assembly is disclosed. The acceleration sensor assembly comprises a spring-mass-support structure, a top cap and a bottom cap. The proof mass plate of the spring-mass-support structure has cutout spaces and is supported by a pair of branched torsional beams which are substantially located in the cutout spaces. The torsional axis of the proof mass plate is offset from the mass center in direction perpendicular to the proof mass plate. The acceleration sensor assembly further comprises multiple coplanar electrodes for differential capacitive sensing and electrostatic forcing. The capacitive accelerometer according to the present invention may comprise one, two or six micromachined acceleration sensor assemblies with electronic signal detection, conditioning and control circuits in different configurations and applications to detect and measure linear and angular accelerations. Methods to fabricate the micromachined acceleration sensor assembly are disclosed.

Claims

1. A micromachined sensor assembly, for use in a capacitive accelerometer, comprising:

(a) a spring-mass-support structure, said spring-mass-support structure having a top side and a bottom side,

(b) a top cap bonded on the top side of said spring-mass-support structure, and

(c) a bottom cap bonded on the bottom side of said spring-mass-support structure,

(d) a bonding means for bonding said top cap on the top side of said spring-mass-support structure and bonding said bottom cap on the bottom side of said spring-mass-support structure;

wherein said spring-mass-support structure comprises a frame, a pair of branched torsional beams, and a proof mass plate, said proof mass plate having a center of mass and a torsional axis;

wherein each one of said pair of branched torsional beams comprises a stem beam coupled to said frame and two branch beams coupled to said proof mass plate such that said proof mass plate is suspended by said pair of torsional beams, said torsional axis is offset from said center of mass in a direction perpendicular to said proof mass plate;

wherein said proof mass plate comprises cutout spaces to receive each one of said pair of torsional beams such that said torsional beams are substantially located within said cutout spaces of said proof mass plate.

2. The micromachined sensor assembly of claim 1, wherein said torsional beams are symmetrically positioned and arranged in such a way that, in top view, one of said pair of torsional beams is a mirror image of the other of said pair of torsional beams.

3. The micromachined sensor assembly of claim 2, wherein said branch beams of each said torsional beam are positioned in-line and perpendicular to said stem beam of each said torsional beam, forming a “

T”

shape.

4. The micromachined sensor assembly of claim 3, wherein said top cap comprises:

(a) a first gap, a first depressed area which is facing down to said proof mass plate,

(b) multiple first electrode pads deposed on said first depressed area, wherein said first electrode pads are electrically isolated from a silicon substrate with dielectric material,

(c) a plurality of first non-through holes deposed in said first depressed area for damping control,

(d) multiple first travel stops deposed on said first depressed area,

(e) multiple wire bond pads and multiple first wires on a top surface, said wire bond pads and first wires are electrically isolated from the silicon substrate with the dielectric material,

(f) multiple first vias, wherein said first vias are electrically isolated from the silicon substrate with the dielectric material and filled with polysilicon material to connect said first electrode pads to corresponding said wire bond pads, and

(g) a first bonding area for bonding to the top side of said spring-mass-support structure.

5. A method to fabricate said top cap of said micromachined sensor assembly of claim 4, said method to fabricate said top cap including steps of:

(a) providing a silicon P wafer, said silicon P wafer having a top P side and a bottom P side;

(b) etching said bottom P side to a predetermined depth to form said first depressed area with first travel stops by a timed wet etching process;

(c) etching said bottom P side to make said first non-through holes for damping control and, at the same time, form non-through holes for said first vias by an anisotropic DRIE process;

(d) etching said top P side to form through holes with smaller diameter for said first vias by anisotropic etching process;

(e) depositing dielectric material to form insulator layers in the through holes of said first vias and on selected areas of said silicon P wafer;

(f) filling and sealing said first vias with polysilicon;

(g) growing polysilicon on selected areas to form said first electrode pads;

(h) depositing gold on selected areas of said top P side to form said wire bonding pads and said first wires connecting to said first vias.

6. The micromachined sensor assembly of claim 3, wherein said bottom cap comprises:

(a) a second gap, a second depressed area which is facing up to said proof mass plate,

(b) multiple second electrode pads deposed on said second depressed area, wherein said second electrode pads are electrically isolated from a silicon substrate with a dielectric material,

(c) a plurality of second non-through holes deposed in said second depressed area for damping control,

(d) multiple second travel stops deposed on said second depressed area,

(e) multiple solder joint pads and multiple second wires deposed on the bottom side, wherein said solder joint pads and said second wires are electrically isolated from the silicon substrate with the dielectric material,

(f) multiple second vias, wherein said second vias are electrically isolated from the silicon substrate with the dielectric material and filled with polysilicon material to connect said second electrode pads to corresponding said solder joint pads,

(g) solder reflow prevention trenches deposed on the bottom side, and

(h) a second bonding area for bonding to the bottom side of said spring-mass-support structure.

7. A method to fabricate said bottom cap of said micromachined sensor assembly of claim 6, said method to fabricate said bottom cap including steps of:

(a) providing a silicon P wafer, said silicon P wafer having a top P side and a bottom P side;

(b) etching said top P side to a predetermined depth to form said second depressed area with said second travel stops by an timed wet etching process;

(c) etching said top P side to make said second non-through holes for damping control and, at the same time, form non-through holes for said second vias by an anisotropic DRIE process;

(d) etching said bottom P side to form through holes with smaller diameter for said second vias and to form said solder reflow prevention trenches by anisotropic etching process;

(e) depositing dielectric material to form insulator layers in the through holes of said second vias and on selected areas of said silicon P wafer;

(f) filling and sealing said second vias with polysilicon;

(g) forming said second electrode pads by growing polysilicon on selected areas; and

(h) depositing gold on selected areas on said bottom P side to form said solder joint pads and said second wires connecting to said second vias.

8. The micromachined sensor assembly of claim 3, wherein said bonding means include eutectic gold bonding in atmosphere to bond said top cap and said bottom cap on said spring-mass-support structure forming an integrated micromachined sensor assembly.

9. The micromachined sensor assembly of claim 3, wherein said bonding means include fusion bonding in vacuum to bond said top cap and said bottom cap on said spring-mass-support structure forming a monolithic micromachined sensor assembly.

10. A method to fabricate said spring-mass-support structure of said micromachined sensor assembly of claim 3, said method including steps of:

(a) providing a sandwiched silicon wafer of P+ layer, P++ layer and P layer, said sandwiched silicon wafer having a top side P+ layer and a bottom side P layer;

(b) etching out up to 85-90% of the thickness of said P layer from said bottom side and forming a pattern of edge gaps defining said proof mass plate and said cutout spaces with an anisotropic DRIE process;

(c) etching out the rest 10-15% of the thickness of said P layer until P++ layer from said bottom side in areas of the edge gaps defining said proof mass plate and said cutout spaces by a wet etching process;

(d) etching from said top side through said P+ layer and P++ layer, forming the gaps around said proof mass plate and said torsional beams and releasing said spring-mass-support structure by the DRIE process.

11. An accelerometer comprising at least one micromachined sensor assembly and an electronic signal detection, conditioning and control circuit, said micromachined sensor assembly comprising:

(a) a spring-mass-support structure, said spring-mass-support structure having a top side and a bottom side,

(b) a top cap,

(c) a bottom cap,

(d) a bonding means for bonding said top cap on the top side of said spring-mass-support structure and bonding said bottom cap on the bottom side of said spring-mass-support structure;

wherein said spring-mass-support structure comprises a frame, a pair of branched torsional beams, and a proof mass plate, said proof mass plate having a center of mass and a torsional axis;

wherein each one of said pair of branched torsional beams comprises a stem beam coupled to said frame and two branch beams coupled to said proof mass plate such that said proof mass plate is suspended with said pair of torsional beams, said torsional axis is offset from said center of mass in a direction perpendicular to said proof mass plate;

wherein said proof mass plate comprises cutout spaces to receive each one of said pair of torsional beams such that said torsional beams are substantially located within said cutout spaces of said proof mass plate.

12. The micromachined sensor assembly of said accelerometer of claim 11, wherein said torsional beams are symmetrically positioned and arranged in such a way that, in top view, one of said pair of torsional beams is a mirror image of the other of said pair of torsional beams.

13. The micromachined sensor assembly of said accelerometer of claim 12, wherein two said branch beams of each said torsional beam are arranged in-line and perpendicular to said stem beam of each said torsional beam, forming a “

T”

shape.

14. The micromachined sensor assembly of said accelerometer of claim 13, wherein said top cap comprises:

(a) a first gap, a first depressed area which is facing down to said proof mass plate,

(b) multiple first electrode pads deposed on said first depressed area, said first electrode pads are electrically isolated from a silicon substrate by dielectric material,

(c) a plurality of first non-through holes deposed in said first depressed area for damping control,

(d) multiple first travel stops deposed on said first depressed area,

(e) multiple wire bond pads on a top surface, said wire bond pads are electrically isolated from the silicon substrate with the dielectric material,

(f) multiple first vias, said first vias are electrically isolated from the silicon substrate with the dielectric material and filled with polysilicon material to connect said first electrode pads to corresponding said wire bond pads, and

(g) a first bonding area for bonding to the top side of said spring-mass-support structure.

15. The micromachined sensor assembly of said accelerometer of claim 14, wherein said bottom cap comprises:

(a) a second gap, a second depressed area which is facing up to said proof mass plate,

(b) multiple second electrode pads deposed on said second depressed area, said second electrode pads are electrically isolated from the silicon substrate with the dielectric material,

(c) a plurality of second non-through holes deposed in said second depressed area for damping control,

(d) multiple second travel stops deposed on said second depressed area,

(e) multiple solder joint pads deposed on the bottom side, said solder joint pads are electrically isolated from the silicon substrate with the dielectric material,

(f) multiple second vias, said second vias are electrically isolated from the silicon substrate with the dielectric and then filled with polysilicon material to connect said second electrode pads to corresponding said solder joint pads,

(g) solder reflow prevention trenches deposed on the bottom side, and

(h) a second bonding area for bonding to the bottom side of said spring-mass-support structure.

16. The micromachined sensor assembly of said accelerometer of claim 15, wherein said bonding means includes eutectic gold bonding in atmosphere to bond said top cap and said bottom cap on said spring-mass-support structure forming an integrated micromachined sensor assembly.

17. The micromachined sensor assembly of said accelerometer of claim 15, wherein said bonding means includes fusion bonding in vacuum to bond said top cap and said bottom cap on said spring-mass-support structure forming a monolithic micromachined sensor assembly.

18. An accelerometer of claim 15, said accelerometer comprising two said micromachined sensor assemblies arranged back-to-back, face-to-face or side-by-side with their sensing axes in-line and in opposite directions;

whereby said electronic circuit performs signal detection, conditioning and feedback control for said micromachined sensor assemblies as well as arithmetic functions of addition and subtraction;

whereby angular acceleration and linear acceleration can be detected and measured accurately.

19. An accelerometer of claim 15, wherein said accelerometer comprises three pairs of said micromachined sensors assemblies;

wherein each pair of said micromachined sensor assemblies ing arranged back-to-back, face-to-face or side-by-side with their sensing axes in-line and in opposite directions;

wherein said three pairs of micromachined sensor assemblies are further arranged orthogonally to each other;

whereby said electronic circuit performs signal detection, conditioning and feedback control for said micromachined sensor assemblies as well as arithmetic functions of addition and subtraction;

whereby three dimensional angular accelerations and three dimensional linear accelerations can be detected and measured accurately.