Defect reduction in seeded aluminum nitride crystal growth
First Claim
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1. A bulk single crystal of AlN having a diameter greater than 20 mm, a thickness greater than 0.1 mm, and an areal planar defect density <
- 100 cm−
2.
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Abstract
Bulk single crystal of aluminum nitride (AlN) having an a real planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
239 Citations
44 Claims
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1. A bulk single crystal of AlN having a diameter greater than 20 mm, a thickness greater than 0.1 mm, and an areal planar defect density <
- 100 cm−
2. - View Dependent Claims (2, 3, 4, 5, 6, 7)
- 100 cm−
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8. A boule comprising a bulk single crystal of AlN, having a diameter greater than 20 mm, a thickness greater than 5 mm, and an areal density of threading dislocations <
- 106 cm−
2 in each cross-section of the bulk single crystal disposed in a plane perpendicular to a growth direction of the crystal. - View Dependent Claims (9)
- 106 cm−
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10. A boule comprising a bulk single crystal of AlN having a sufficient thickness to enable the formation of at least five wafers therefrom, each wafer having a thickness of at least 0.1 mm, a diameter of at least 20 mm, and a threading dislocation density <
- 106 cm−
2. - View Dependent Claims (11)
- 106 cm−
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12. A boule comprising a substantially cylindrical bulk single crystal of AlN having a diameter of at least 20 mm and having a sufficient thickness to enable the formation of at least five wafers therefrom, each wafer having a thickness of at least 0.1 mm a diameter of at least 20 mm, and a triple-crystal X-ray rocking curve of less than 50 arcsec full width at half maximum (FWHM) for a (0002) reflection, wherein each wafer has substantially the same diameter as each of the other wafers.
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13. A method for growing single-crystal aluminum nitride (AlN), the method comprising the steps of:
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providing a holder comprising a backing plate, the holder (i) being sized and shaped to receive an AlN seed therein and (ii) including an AlN foundation bonded to the backing plate; disposing an AlN seed and an Al foil on the AlN foundation with the Al foil between the seed and the AlN foundation; melting the Al foil to uniformly wet the foundation with a layer of Al; and depositing aluminum and nitrogen onto the seed under conditions suitable for growing single-crystal AlN originating at the seed. - View Dependent Claims (14, 15, 16, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
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17. A method for growing single-crystal aluminum nitride (AlN), the method comprising the steps of:
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providing a holder sized and shaped to receive an AlN seed therein, the holder consisting essentially of a substantially impervious backing plate; disposing an AlN seed and an Al foil on the backing plate with the Al foil between the seed and the backing plate; melting the Al foil to uniformly wet the backing plate and the back of the AlN seed with a layer of Al; and depositing aluminum and nitrogen onto the seed under conditions suitable for growing single-crystal AlN originating at the seed. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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Specification