Etching processes used in MEMS production
First Claim
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1. A method of fabricating an electronic device, comprising:
- providing an unreleased electronic device within an etch chamber, wherein the unreleased electronic device comprises;
a sacrificial layer; and
one or more light-transmissive layers adjacent a first side of the sacrificial layer;
performing an initial etch through a portion of the sacrificial layer, wherein the initial etch exposes at least a portion of the one or more light-transmissive layers;
releasing a gaseous etchant precursor into the etch chamber; and
physically exciting the gaseous etchant precursor by exposing the gaseous etchant precursor to UV light through the one or more light-transmissive layers so as to form a chemically active species capable of etching a remaining portion of the sacrificial layer.
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Abstract
The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.
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Citations
21 Claims
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1. A method of fabricating an electronic device, comprising:
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providing an unreleased electronic device within an etch chamber, wherein the unreleased electronic device comprises; a sacrificial layer; and one or more light-transmissive layers adjacent a first side of the sacrificial layer; performing an initial etch through a portion of the sacrificial layer, wherein the initial etch exposes at least a portion of the one or more light-transmissive layers; releasing a gaseous etchant precursor into the etch chamber; and physically exciting the gaseous etchant precursor by exposing the gaseous etchant precursor to UV light through the one or more light-transmissive layers so as to form a chemically active species capable of etching a remaining portion of the sacrificial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating an electronic device, comprising:
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providing a partially fabricated electronic device within a process chamber, the partially fabricated electronic device comprising an exposed portion of a layer to be etched; introducing an gaseous etchant into the process chamber, wherein the etchant can be activated by exposure to ultraviolet radiation; and exposing a portion of the layer to be etched to radiation from an ultraviolet laser, wherein exposure to the ultraviolet laser activates the gaseous etchant. - View Dependent Claims (10, 11, 12)
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13. A method of fabricating an electronic device, comprising:
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providing an electronic device within a process chamber, wherein the electronic device comprises a layer to be etched; providing a gaseous precursor mixture, wherein the gaseous precursor mixture comprises fluorine and a noble gas; exposing the gaseous precursor mixture to ultraviolet radiation to form a noble gas fluoride; and exposing the electronic device to the noble gas fluoride. - View Dependent Claims (14, 15, 16, 17)
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18. A method of fabricating an electronic device, comprising:
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providing an electronic device within a process chamber, wherein the electronic device comprises a layer to be etched; releasing an etchant into the process chamber, wherein the etchant comprises a noble gas fluorine, the etchant reacting with the layer to be etched to form elemental noble gas as a byproduct; releasing fluorine into the process chamber; and exposing the fluorine and the elemental noble gas to ultraviolet radiation to generate additional noble gas fluorine. - View Dependent Claims (19, 20, 21)
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Specification