Multi-layer micro structure for sensing substance

• US 8,323,580 B2
• Filed: 02/18/2011
• Issued: 12/04/2012
• Est. Priority Date: 05/29/2007
• Status: Expired due to Fees

• Current Assignee: Excellent Capacity Limited
• Original Assignee: OptoTrace Technologies, Inc.
• Inventors: Wang, Hong, Liu, Zhimin
• Primary Examiner(s): Jarrett, Lore
• Application Number:
  US13/030,274
• Publication Number:
  US 20110140209A1
• Time in Patent Office: 655 Days
• Field of Search: 422/186.06, 436/525, 356/301
• US Class Current: 422/186.06
• CPC Class Codes: G01N 21/658 enhancement Raman, e.g. surface plasmons

Abstract

A micro structure for sensing a substance using light scattering includes a substrate, a first layer on the substrate, wherein the first layer comprises a metallic material, a second layer over the first layer, and a mask layer over the second layer. A plurality of nano holes are formed through the mask layer and the second layer, wherein the plurality of holes are defined in part by internal surfaces on the second layer and the mask layer. Two or more structure layers are formed on the mask layer and the internal surfaces in the plurality of holes. The two or more structure layers comprise different material compositions.

Claims

1. A micro structure for sensing a substance using light scattering, comprising:

a substrate;

a first layer on the substrate, wherein the first layer comprises a metallic material;

a second layer over the first layer;

a mask layer over the second layer, wherein the mask layer comprises a top surface, wherein a plurality of holes are formed through the mask layer and the second layer, wherein the plurality of holes are defined in part by internal surfaces of the second layer and the mask layer, wherein widths of the plurality of holes are in the range of about 1 nm and about 1,000 nm; and

two or more structure layers formed on the top surface of the mask layer and on the internal surfaces of the second layer and the mask layer, wherein the two or more structure layers comprise different material compositions.

2. The micro structure of claim 1, wherein the two or more structure layers comprise at least one of a polymeric material, a metallic material, or an oxide material.

3. The micro structure of claim 1, wherein the material compositions of the two or more structure layers form a repetitive pattern.

4. A micro structure for sensing a substance using light scattering, comprising:

a substrate;

a first layer on the substrate;

a second layer over the first layer;

a mask layer over the second layer, wherein the mask layer comprises a top surface, wherein a plurality of holes are formed through the mask layer and the second layer, wherein the plurality of holes are defined in part by internal surfaces of the second layer and the mask layer, wherein widths of the plurality of holes are in the range of about 1 nm and about 1,000 nm; and

one or more structure layers formed on the top surface of the mask layer and on the internal surfaces of the second layer and the mask layer, wherein the one or more structure layers comprises at least one of a polymeric material, a metallic material, or an oxide material.

5. The micro structure of claim 4, wherein the one or more structure layers comprise a material selected from the group consisting of Ti, Ni, Co, Ag, Au, Pd, Cu, Pt, Sn, Al, Fe, Cr, Rh, Ru, SiO₂, Al₂O₃, ZnO, TiO₂, SiO₂, Si₃N₄, Ta₂O₅, Zn oxide, Fe oxide, Sn oxide, Sb oxide, Ag oxide, Au oxide, and polymethyl methacrylate.

6. The micro structure of claim 4, wherein the one or more structure layers comprise a material selected from the group consisting of GaAs, ZnS, CdS, InGaN, InGaN/GaN, A1GaAs, InAgAs, GaAs/GaAlAs, GaN, 4H SiC, AN, GaN, A1GaN/GaN, InP, InAlAs/InGaAs, Cs, Rb, InAs, AlSb/InAs, A1GaAs/InGaAs, InAlAs, InGaP, SiGe, C, Si, and SiC.

7. The micro structure of claim 4, wherein the first layer comprises a material selected from a group consisting of Ti, Ni, or Co.

8. The micro structure of claim 4, wherein the second layer comprises Ti, Ni, Co, Cr, Al, or Zn.

9. The micro structure of claim 4, further comprising a third layer between the second layer and the mask layer, wherein the plurality of holes are formed through the mask layer, the third layer, and the second layer, wherein the third layer comprises Ti, Ni, Co, Ag, Au, Pd, Cu, Pt, Sn, Al, Fe, Cr, Rh, Ru, SiO₂, Al₂O₃, ZnO, TiO₂, SiO₂, Si₃N₄, Ta₂O₅, Zn oxide, Fe oxide, Sn oxide, Sb oxide, Ag oxide, Au oxide, or polymethyl methacrylate.

10. The micro structure of claim 4, wherein the plurality of holes expose a portion of an upper surface of the first layer.

11. The micro structure of claim 4, further comprising a bias layer between the first layer and the second layer, wherein the plurality of holes are formed through the mask layer, the second layer, and the bias layer.

12. The micro structure of claim 11, wherein the one or more structure layers cover the entire top surface of the mask layer and on the entire internal surfaces of the second layer and the mask layer.

13. The micro structure of claim 4, wherein the one or more structure layers are formed on the top surface of the mask layer and on the internal surfaces of the second layer and the mask layer by physical vapor deposition, chemical vapor deposition, metal organic chemical vapor deposition, atomic layer deposition, molecular beam epitaxy, E-Beam coating, electroplating, electrolysis plating, spin coating, or spray.

14. The micro structure of claim 4, wherein the plurality of holes in the second layer and the mask layer are distributed substantially in a periodic array.

15. The micro structure of claim 4, wherein the center-to-center spacing between the adjacent holes of the plurality of holes is in the range of about 1 nm and about 1000 nm.

16. The micro structure of claim 4, wherein depths of the plurality of holes are in the range of 1 nm and 2000 nm.

17. The micro structure of claim 4, wherein the mask layer comprises aluminum, Al oxide, or PMMA.

18. A method for making a micro structure for sensing a substance using light scattering, comprising:

forming a first layer on a substrate;

forming a second layer over the first layer;

forming a mask layer over the first layer, wherein the mask layer comprises a top surface;

forming a plurality of holes in the mask layer and the second layer, wherein the plurality of holes are defined in part by internal surfaces of the second layer and the mask layer, wherein widths of the plurality of holes are in the range of about 1 nm and about 1,000 nm; and

after the holes are formed, forming one or more structure layers on the top surface of the mask layer and on the internal surfaces of the second layer and the mask layer.

19. The method of claim 18, further comprising:

forming a third layer comprising aluminum on the second layer, wherein the step of forming the mask layer comprises anodizing at least a portion of the third layer to form the mask layer, wherein the mask layer comprises aluminum oxide, wherein the plurality of nano holes are formed in the second layer and the third layer by etching the second layer and the third layer through a plurality of openings in the mask layer.

20. The method of claim 18, wherein the step of forming a plurality of holes comprises:

pressing a mold comprising a plurality of protrusions on to the mask layer;

forming a plurality of recesses in the mask layer; and

etching the mask layer and the second layer through the plurality of recesses to form the plurality of holes in the mask layer and the second layer.