Semiconductor device, electronic device, and method of manufacturing semiconductor device

• US 8,324,018 B2
• Filed: 12/18/2009
• Issued: 12/04/2012
• Est. Priority Date: 01/28/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Isa, Toshiyuki, Fujii, Gen, Morisue, Masafumi, Kawamata, Ikuko
• Primary Examiner(s): Lee, Hsien Ming
• Application Number:
  US12/641,701
• Publication Number:
  US 20100099217A1
• Time in Patent Office: 1,082 Days
• Field of Search: 438/104, 438/149, 438/161, 438/159, 257/72, 257/43, 257/E21.4, 257/E21.001
• US Class Current: 438/104
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 71/236 using printing techniques, e.g. applying the etch liquid using an ink jet printer
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing
• CPC Class Codes: H10K 71/621 Providing a shape to conductive layers, e.g. patterning or selective deposition
• CPC Class Codes: Y02P 80/30 Reducing waste in manufacturing processes; Calculations of released waste quantities

Abstract

Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.

Claims

1. A method for manufacturing a semiconductor device comprising steps of:

forming a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, wherein the semiconductor layer comprises a first metal oxide; and

forming a source electrode layer electrically connected to the thin film transistor by a droplet discharge method, wherein the source electrode layer comprises a second metal oxide,

wherein a width of the source electrode layer is continuously varied.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the first metal oxide is selected from the group consisting of zinc oxide and zinc oxide added with at least one of indium and gallium.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the second metal oxide is at least one selected from the group consisting of indium tin oxide, indium tin oxide containing silicon oxide, and zinc oxide.

4. The method for manufacturing a semiconductor device according to claim 1, further comprising a step of forming an antenna over the thin film transistor.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the first metal oxide comprises a first oxide semiconductor.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the second metal oxide comprises a second oxide semiconductor.

7. A method for manufacturing a semiconductor device comprising steps of:

forming a thin film transistor over a substrate, the thin film transistor comprising a semiconductor layer, wherein the semiconductor layer comprises a first metal oxide; and

forming a drain electrode layer electrically connected to the thin film transistor by a droplet discharge method, wherein the drain electrode layer comprises a second metal oxide,

wherein a width of the drain electrode layer is continuously varied.

8. The method for manufacturing a semiconductor device according to claim 7, wherein the first metal oxide is selected from the group consisting of zinc oxide and zinc oxide added with at least one of indium and gallium.

9. The method for manufacturing a semiconductor device according to claim 7, wherein the second metal oxide is at least one selected from the group consisting of indium tin oxide, indium tin oxide containing silicon oxide, and zinc oxide.

10. The method for manufacturing a semiconductor device according to claim 7, further comprising a step of forming an antenna over the thin film transistor.

11. The method for manufacturing a semiconductor device according to claim 7, wherein the first metal oxide comprises a first oxide semiconductor.

12. The method for manufacturing a semiconductor device according to claim 7, wherein the second metal oxide comprises a second oxide semiconductor.

13. A method for manufacturing a semiconductor device comprising steps of:

forming a gate electrode over a substrate;

forming a gate insulating layer over the gate electrode;

forming a semiconductor layer over the gate electrode with the gate insulating layer interposed therebetween, the semiconductor layer comprising a first metal oxide; and

forming a source electrode layer electrically connected to the semiconductor layer by a droplet discharge method, wherein the source electrode layer comprises a second metal oxide,

wherein a width of the source electrode layer is continuously varied.

14. The method for manufacturing a semiconductor device according to claim 13, wherein the first metal oxide is selected from the group consisting of zinc oxide and zinc oxide added with at least one of indium and gallium.

15. The method for manufacturing a semiconductor device according to claim 13, wherein the second metal oxide is at least one selected from the group consisting of indium tin oxide, indium tin oxide containing silicon oxide, and zinc oxide.

16. The method for manufacturing a semiconductor device according to claim 13, further comprising a step of forming an antenna over the source electrode layer.

17. The method for manufacturing a semiconductor device according to claim 13, wherein the first metal oxide comprises a first oxide semiconductor.

18. The method for manufacturing a semiconductor device according to claim 13, wherein the second metal oxide comprises a second oxide semiconductor.

19. A method for manufacturing a semiconductor device comprising steps of:

forming a gate electrode over a substrate;

forming a gate insulating layer over the gate electrode;

forming a semiconductor layer over the gate electrode with the gate insulating layer interposed therebetween, the semiconductor layer comprising a first metal oxide; and

forming a drain electrode layer electrically connected to the semiconductor layer by a droplet discharge method, wherein the drain electrode layer comprises a second metal oxide,

wherein a width of the drain electrode layer is continuously varied.

20. The method for manufacturing a semiconductor device according to claim 19, wherein the first metal oxide is selected from the group consisting of zinc oxide and zinc oxide added with at least one of indium and gallium.

21. The method for manufacturing a semiconductor device according to claim 19, wherein the second metal oxide is at least one selected from the group consisting of indium tin oxide, indium tin oxide containing silicon oxide, and zinc oxide.

22. The method for manufacturing a semiconductor device according to claim 19, further comprising a step of forming an antenna over the drain electrode layer.

23. The method for manufacturing a semiconductor device according to claim 19, wherein the first metal oxide comprises a first oxide semiconductor.

24. The method for manufacturing a semiconductor device according to claim 19, wherein the second metal oxide comprises a second oxide semiconductor.