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Semiconductor device and method for manufacturing the same

  • US 8,324,027 B2
  • Filed: 07/08/2010
  • Issued: 12/04/2012
  • Est. Priority Date: 07/10/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming a gate electrode layer over a substrate having an insulating surface;

    forming a gate insulating layer over the gate electrode layer;

    forming an oxide semiconductor layer over the gate insulating layer;

    performing dehydration or dehydrogenation on the oxide semiconductor layer;

    forming a source electrode layer and a drain electrode layer over the dehydrated or dehydrogenated oxide semiconductor layer,wherein a depression overlapping the gate electrode layer is formed in the oxide semiconductor layer, andwherein the gate electrode layer, the source electrode layer, and the drain electrode layer are each a conductive film having a light transmitting property.

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