Method and structure of an integrated CMOS and MEMS device using air dielectric
First Claim
1. An integrated circuit device comprising:
- a base substrate having a surface region;
an interlayer dielectric material overlying the surface region;
a thickness of single crystal silicon material overlying the interlayer dielectric material, the thickness of single crystal silicon material having a font region and a backside region, the front region facing the interlayer dielectric material;
a plurality of transistor devices spatially arranged in the thickness of silicon crystal silicon material, each of the transistor devices having a gate structure within a region of the interlayer dielectric material; and
an enclosure housing configured to form a cavity between the backside region of the thickness of silicon material and an upper inside region of the enclosure housing.
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Accused Products
Abstract
In a specific embodiment, the present invention provides an integrated circuit device. The device includes a base substrate having a surface region and an interlayer dielectric material overlying the surface region. The device also has a thickness of single crystal silicon material overlying the interlayer dielectric material. In one or more embodiments, the thickness of single crystal silicon material has a front region and a backside region. The front region faces the interlayer dielectric material. In a preferred embodiment, the device has a plurality of transistor devices spatially arranged in the thickness of silicon crystal silicon material. Each of the transistor devices has a gate structure within a region of the interlayer dielectric material. The device also has an enclosure housing configured to form a cavity between the backside region of the thickness of silicon material and an upper inside region of the enclosure housing.
36 Citations
20 Claims
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1. An integrated circuit device comprising:
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a base substrate having a surface region; an interlayer dielectric material overlying the surface region; a thickness of single crystal silicon material overlying the interlayer dielectric material, the thickness of single crystal silicon material having a font region and a backside region, the front region facing the interlayer dielectric material; a plurality of transistor devices spatially arranged in the thickness of silicon crystal silicon material, each of the transistor devices having a gate structure within a region of the interlayer dielectric material; and an enclosure housing configured to form a cavity between the backside region of the thickness of silicon material and an upper inside region of the enclosure housing. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for fabricating an integrated circuit device, the method comprising:
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providing a bulk substrate; forming a dielectric material overlying the bulk substrate; forming a thickness of single crystal silicon material overlying the dielectric material, the thickness of single crystal silicon material having a front region and a backside region; forming an interlayer dielectric material overlying the thickness of single crystal silicon material; forming a plurality of transistor devices spatially arranged in the thickness of silicon crystal silicon material, each of the transistor devices having a gate structure within a region of the interlayer dielectric material; bonding the interlayer dielectric material to a base substrate, the base substrate having a surface region, the interlayer dielectric material being bonded to the surface region; removing the bulk substrate; removing the dielectric material; and forming an enclosure housing configured to form a cavity between the backside region of the thickness of silicon material and an upper inside region of the enclosure housing. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification