Semiconductor device having oxide semiconductor layer
First Claim
1. A semiconductor device comprising:
- a pixel portion including a first transistor and a driver circuit portion including a second transistor, the pixel portion and the driver circuit portion being provided over a substrate,the first transistor and the second transistor each comprising;
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and
an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with the oxide semiconductor layer,a first gate wiring formed from a same layer as the gate electrode layer of the first transistor;
a second gate wiring formed from a same layer as the gate electrode layer of the second transistor; and
a connection wiring formed from a same layer as the source electrode layer and the drain electrode layer of the second transistor, and in electrical contact with the first gate wiring through the second gate wiring,wherein the gate electrode layer, the source electrode layer, and the drain electrode layer of the first transistor comprise an oxide conductive layer, andwherein the gate electrode layer, the source electrode layer, and the drain electrode layer of the second transistor comprise a metal layer.
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Accused Products
Abstract
Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer.
160 Citations
25 Claims
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1. A semiconductor device comprising:
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a pixel portion including a first transistor and a driver circuit portion including a second transistor, the pixel portion and the driver circuit portion being provided over a substrate, the first transistor and the second transistor each comprising; a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with the oxide semiconductor layer, a first gate wiring formed from a same layer as the gate electrode layer of the first transistor; a second gate wiring formed from a same layer as the gate electrode layer of the second transistor; and a connection wiring formed from a same layer as the source electrode layer and the drain electrode layer of the second transistor, and in electrical contact with the first gate wiring through the second gate wiring, wherein the gate electrode layer, the source electrode layer, and the drain electrode layer of the first transistor comprise an oxide conductive layer, and wherein the gate electrode layer, the source electrode layer, and the drain electrode layer of the second transistor comprise a metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a pixel portion including a first transistor and a storage capacitor over a substrate; and a driver circuit portion including a second transistor over the substrate, wherein the first transistor and the second transistor each comprise; a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with the oxide semiconductor layer, a first gate wiring formed from a same layer as the gate electrode layer of the first transistor; a second gate wiring formed from a same layer as the gate electrode layer of the second transistor; and a connection wiring formed from a same layer as the source electrode layer and the drain electrode layer of the second transistor, and in electrical contact with the first gate wiring through the second gate wiring, wherein the storage capacitor is formed by a capacitor wiring layer, a dielectric over the capacitor wiring layer, and a capacitor electrode layer over the dielectric, wherein the gate electrode layer, the source electrode layer, and the drain electrode layer of the first transistor comprise an oxide conductive layer, wherein the gate electrode layer, the source electrode layer, and the drain electrode layer of the second transistor comprise a metal layer, wherein the capacitor wiring layer comprises a layer formed from a same layer as the gate electrode layer of the first transistor, wherein the dielectric comprises a layer formed from a same layer as the gate insulating layer of the first transistor, and wherein the capacitor electrode layer comprises a layer formed from a same layer as the source electrode layer and the drain electrode layer of the first transistor. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a pixel portion including a first transistor and a driver circuit portion including a second transistor, the pixel portion and the driver circuit portion being provided over a substrate, the first transistor and the second transistor each comprising; a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and an oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, the oxide insulating layer being in contact with the oxide semiconductor layer, a first gate wiring formed from a same layer as the gate electrode layer of the first transistor; a second gate wiring formed from a same layer as the gate electrode layer of the second transistor; a connection wiring formed from a same layer as the source electrode layer and the drain electrode layer of the second transistor, and in electrical contact with the first gate wiring through the second gate wiring, a third gate wiring formed from a same layer as the gate electrode layer of the second transistor, a source wiring formed from a same layer as the source electrode layer and the drain electrode layer of the first transistor, the source wiring overlapping the third gate wiring, and an additional oxide insulating layer over the gate insulating layer and the oxide semiconductor layers, wherein the gate insulating layer and the additional oxide insulating layer are interposed between the third gate wiring and the source wiring, wherein the gate electrode layer, the source electrode layer, and the drain electrode layer of the first transistor comprise an oxide conductive layer, and wherein the gate electrode layer, the source electrode layer, and the drain electrode layer of the second transistor comprise a metal layer. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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Specification