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Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same

  • US 8,324,628 B2
  • Filed: 02/29/2008
  • Issued: 12/04/2012
  • Est. Priority Date: 06/27/2007
  • Status: Active Grant
First Claim
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1. A channel layer for a thin film transistor comprising IZO (indium zinc oxide) doped with a transition metal, wherein the transition metal is at least one selected from the group consisting of Co, Rh, Ir, Mt, Ni, Pd, Pt, Ds, Ag, Au, and Rg, and the channel layer has an electrical conductivity lower than that of an undoped IZO due to the transition metal.

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