Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device

• US 8,324,632 B2
• Filed: 01/03/2008
• Issued: 12/04/2012
• Est. Priority Date: 08/28/2003
• Status: Active Grant

• Current Assignee: Satco Products Incorporated
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Nagai, Hideo
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): FOX, BRANDON C
• Application Number:
  US11/969,102
• Publication Number:
  US 20080149945A1
• Time in Patent Office: 1,797 Days
• Field of Search: 257/79, 257/88, 372/43.01
• US Class Current: 257/79
• CPC Class Codes: F21K 9/00 Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 24/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 : the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 : with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/505 : characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure having a N-sided polygonal cross-section where N is an integer equal to or larger than 6. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Claims

1. A semiconductor light emitting device comprising:

a base substrate;

a multilayer epitaxial structure that includes a first conductive layer, a second conductive layer and a light emitting layer that is formed between the first conductive layer and the second conductive layer, the first conductive layer being disposed on a first of two main surfaces of the base substrate in such a manner to be positioned closer to the base substrate than the second conductive layer is;

a first electrode in contact with the first conductive layer;

a second electrode in contact with the second conductive layer;

an insulating film disposed on each side surface of the multilayer epitaxial structure and part of an upper surface of the multilayer epitaxial structure;

a first power feed terminal and a second power feed terminal disposed on a second of the two main surfaces of the base substrate; and

a first through hole and a second through hole disposed on the base substrate, wherein

a first conductive film has an extended portion projecting from a bottom surface of the multilayer epitaxial structure,

the first electrode is electrically connected to the first power feed terminal via the first conductive film, the extended portion and the first through hole,

a second conductive film is disposed on the insulating film,

the second electrode is electrically connected to the second power feed terminal via the second conductive film and the second through hole,

the first electrode is a high-reflective electrode, and

a light reflection film is disposed on the first main surface of the base substrate, around the multilayer epitaxial structure.

2. The semiconductor light emitting device of claim 1, wherein

the multilayer epitaxial structure further includes a light reflective layer which is formed between the first conductive layer and the base substrate.

3. The semiconductor light emitting device of claim 1, wherein

the multilayer epitaxial structure is epitaxially grown on the base substrate.

4. The semiconductor light emitting device of claim 1, wherein

the first through hole and the second through hole are disposed in periphery of the base substrate.

5. The semiconductor light emitting device of claim 1, wherein the multilayer epitaxial structure is formed through epitaxial growth on a single-crystal substrate different from the base substrate, and transferred from the single-crystal substrate to the base substrate.

6. The semiconductor light emitting device of claim 1,

wherein the first conductive layer is a p-type semiconductor layer, and

the second conductive layer is an n-type semiconductor layer.

7. The semiconductor light emitting device of claim 1, wherein

an eutectic bonding layer is disposed between the base substrate and the multilayer epitaxial structure.

8. The semiconductor light emitting device of claim 1, wherein the first main surface of the base substrate has a larger area than a main surface of the multilayer epitaxial structure, and the first through hole and the second through hole are disposed on part of the first main surface of the base substrate, at which the multilayer epitaxial structure is not positioned.

9. The semiconductor light emitting device of claim 1, wherein depressions are disposed on the second conductive layer.

10. The semiconductor light emitting device of claim 1, wherein

on a bottom surface of the first conductive layer, a high-reflective electrode is disposed in a manner to surround a mirror structure which is positioned on part of the bottom surface of the first conductive layer, and

on an upper surface of the second conductive layer, a mirror structure is positioned.

11. The semiconductor light emitting device of claim 1, wherein a phosphor film is disposed on the upper surface of the multilayer epitaxial structure.

12. The semiconductor light emitting device of claim 11, wherein the phosphor film is applied at a substantially same thickness.

13. A lighting module including a mounting substrate, wherein the device claimed in claim 1 is mounted on the mounting substrate.

14. A lighting device including the lighting module of claim 13 as a light source.

15. A display element including, as a light source, the semiconductor light emitting device claimed in claim 1.