High efficiency LEDs with tunnel junctions

• US 8,324,637 B2
• Filed: 05/18/2010
• Issued: 12/04/2012
• Est. Priority Date: 02/23/2006
• Status: Active Grant

• Current Assignee: Creeled Incorporated
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Ibbetson, James P., Keller, Bernd P., Mishra, Umesh K.
• Primary Examiner(s): Ho, Anthony
• Application Number:
  US12/782,107
• Publication Number:
  US 20100224860A1
• Time in Patent Office: 931 Days
• Field of Search: 257/81, 257/90, 257/94, 257/104
• US Class Current: 257/81
• CPC Class Codes: H01L 33/0016 having at least two p-n junctions
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction.

Claims

1. A high efficiency wide band gap semiconductor photonic device including a p-type confinement layer comprising:

a first semiconductor layer having a first composition in metallic contact with and disposed between second and third semiconductor layers having compositions dissimilar to said first semiconductor layer, said second semiconductor layer being p-type, and said third semiconductor layer being n-type; and

a tunnel junction, having a tunnel width and a resistance to tunneling, formed from said second, first and third semiconductor layers, adapted to permit charge carriers in said second semiconductor layer to transition into charge carriers having an opposite polarity, wherein a natural dipole associated with said dissimilar materials is used to form said tunnel junction such that said width is smaller than a width in said tunnel junction would be in the absence of said first semiconductor layer, wherein said tunnel junction comprises an impurity located in said second and third semiconductor layers near said tunnel junction forming band gap states within said width.

2. The apparatus of claim 1, wherein said semiconductor photonic device comprises a material from the periodic table group III-nitride material system.

3. The apparatus of claim 1, wherein said first semiconductor layer is approximately 0.3 to 5 nanometers thick.

4. The apparatus of claim 1, wherein said first semiconductor layer comprises an In_xGa_yN layer sandwiched between said third semiconductor layer and said second semiconductor layer, said third semiconductor layer being a highly doped n-type GaN layer and said second semiconductor layer being a highly doped p-type GaN layer, where x+y=1.

5. The apparatus of claim 1, wherein said first semiconductor layer comprises an Al_xGa_yN layer sandwiched between said second semiconductor layer and said third semiconductor layer, said second semiconductor layer being a highly doped p-type GaN layer and said third semiconductor layer being a highly doped n-type GaN layer, where x+y=1.

6. The apparatus of claim 1, wherein said tunnel junction provides an efficient method of lateral current spreading.

7. The apparatus of claim 1, wherein said tunnel junction allows replacement of a light absorbing p-ohmic contact metal with a highly reflective n-ohmic contact metal.

8. The apparatus of claim 1, wherein a plurality of said tunnel junctions allows a plurality of vertically integrated bipolar active regions to be in series.

9. The apparatus of claim 1, wherein said tunnel junction allows inverting the polarity of a light emitting diode structure.

10. A high efficiency wide band gap semiconductor photonic device including a p-type confinement layer comprising:

a first semiconductor layer having a first composition in metallic contact with and disposed between second and third semiconductor layers having compositions dissimilar to said first semiconductor layer, said second semiconductor layer being p-type, and said third semiconductor layer being n-type;

a tunnel junction, having a tunnel width and a resistance to tunneling, formed from said second, first and third semiconductor layers, adapted to permit charge carriers in said second semiconductor layer to transition into charge carriers having an opposite polarity, wherein a natural dipole associated with said dissimilar materials is used to form said tunnel junction such that said width is smaller than a width in said tunnel junction would be in the absence of said first semiconductor layer, wherein said tunnel junction comprises an impurity located in said second and third semiconductor layers near said tunnel junction forming band gap states within said width; and

a plurality of energetically distinct impurities located in said second and third semiconductor layers near said tunnel junction forming a plurality of band gap states that provide a quasi-continuous tunneling path within said width.

11. The apparatus of claim 10, wherein said impurities are the result of a placement in the junction region comprising one of the group consisting of native defects in semiconductor material, dislocations, extended crystal defects, metallic or semi-metallic islands or quantum wells, doping with rare earth impurities, doping with metal ions, implantation, and impurity diffusion.

12. The apparatus of claim 10, further comprising an n-type side of said tunnel junction, and a p-type side of said tunnel junction, wherein said band gap states form a like type of carrier on their respective sides of said tunnel junction.

13. The apparatus of claim 12, wherein said tunnel junction comprises an n-type junction layer having a charge carrier concentration of about 6×

10¹⁹/cm³ or higher.

14. The apparatus of claim 12, wherein said tunnel junction comprises a p-type junction layer having a charge carrier concentration of about 3×

10¹⁹/cm³ or higher.