Visible-light blocking member, infrared sensor including the visible-light blocking member, and liquid crystal display device including the infrared sensor
First Claim
1. A visible-light blocking member as a structure, comprising amorphous germanium or a compound of amorphous germanium having higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region,wherein the structure comprises at least one of an amorphous germanium thin film and an amorphous silicon germanium thin film,wherein the structure comprises the amorphous silicon germanium thin film, andwherein the amorphous silicon germanium thin film comprises germanium at 20 at % to 70 at %.
2 Assignments
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Accused Products
Abstract
In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor.
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Citations
18 Claims
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1. A visible-light blocking member as a structure, comprising amorphous germanium or a compound of amorphous germanium having higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region,
wherein the structure comprises at least one of an amorphous germanium thin film and an amorphous silicon germanium thin film, wherein the structure comprises the amorphous silicon germanium thin film, and wherein the amorphous silicon germanium thin film comprises germanium at 20 at % to 70 at %.
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8. An infrared sensor, comprising:
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a visible-light blocking member as a structure comprising amorphous germanium or a compound of amorphous germanium having higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region; an insulating layer disposed under the visible-light blocking member; an active layer overlapping with the visible-light blocking member and disposed under the insulating layer; an ohmic contact layer disposed under the active layer; a source electrode disposed under the ohmic contact layer; a drain electrode separated from the source electrode and disposed under the ohmic contact layer; a gate insulating layer disposed under the active layer, the source electrode, and the drain electrode; and a gate electrode overlapping with the active layer and disposed under the gate insulating layer. - View Dependent Claims (9, 10, 11)
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12. A liquid crystal display, comprising:
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a lower panel comprising a pixel transistor; a liquid crystal layer disposed on the lower panel; and an upper panel comprising at least one infrared sensor disposed on the liquid crystal layer, wherein the infrared sensor comprises a visible-light blocking member as a structure comprising amorphous germanium or a compound of amorphous germanium having higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A visible-light blocking member as a structure, comprising amorphous germanium or a compound of amorphous germanium having higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region,
wherein the structure comprises a dual thin film structure comprising an amorphous germanium thin film and an amorphous silicon germanium thin film.
Specification