Thin films and methods and machines for forming the thin films
First Claim
1. A method for manufacturing an amorphous vanadium oxide (VOx) film, comprising:
- loading a substrate into a deposition chamber;
flowing a first gas into the chamber, the first gas containing a reactive oxygen species;
flowing nitrogen gas into the chamber; and
vaporizing vanadium from a vanadium source while the first gas and the nitrogen gas are flowing into the chamber so as to deposit an amorphous VOx film on the substrate, where x>
0.
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Accused Products
Abstract
Methods for depositing an amorphous vanadium oxide (VOx) film include vaporizing vanadium from a vanadium source while the a gas containing an oxygen species and a process modifying additive are in the chamber so as to deposit an amorphous VOx film on the substrate, where x>0. The process modifying additive includes a gas flowing into the chamber or vaporized material from a target source. The additive may stabilize the deposition rate of VOx, reduce resistivity, improve thickness control, and improve uniformity of thickness and resistivity. The thin film may be a nitrogen-enhanced, amorphous vanadium oxide (VOxNy) film formed on a substrate, where x>y>0, and the film contains at least 0.2 atomic % nitrogen. The film may be used in a device, such as a thermal or infrared sensor, or more particularly a bolometer.
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Citations
66 Claims
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1. A method for manufacturing an amorphous vanadium oxide (VOx) film, comprising:
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loading a substrate into a deposition chamber; flowing a first gas into the chamber, the first gas containing a reactive oxygen species; flowing nitrogen gas into the chamber; and vaporizing vanadium from a vanadium source while the first gas and the nitrogen gas are flowing into the chamber so as to deposit an amorphous VOx film on the substrate, where x>
0. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method for manufacturing a vanadium oxide (VOx) film, comprising:
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loading a substrate into a deposition chamber; flowing a gas into the chamber, wherein the gas comprises molecules with at least nitrogen and oxygen in the same molecule; and vaporizing vanadium from a vanadium target while the gas is flowing into the chamber so as to deposit a VOx film on the substrate, where x>
0.
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25. A method of manufacturing a vanadium oxide (VOx) film, comprising:
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loading a substrate into a deposition chamber; flowing a first gas into the chamber, the first gas containing a reactive oxygen species; and vaporizing vanadium and nitrogen from a vanadium nitride target while the first gas is flowing into the chamber so as to deposit a VOx film on the substrate, where x>
0. - View Dependent Claims (26, 27)
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28. A method for depositing an amorphous vanadium oxide (VOx) film, comprising:
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loading a substrate into a deposition chamber; flowing a first gas into the chamber at a first regulated flow rate, the first gas containing a reactive oxygen species; flowing a process modifying additive gas into the chamber at a second regulated flow rate, wherein the first flow rate is greater than the second flow rate; and vaporizing vanadium from a vanadium source while the first gas and the process modifying additive gas are flowing into the chamber so as to deposit an amorphous VOx film on the substrate, where x>
0. - View Dependent Claims (29, 30, 31, 32, 33, 34)
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35. A method of manufacturing an amorphous vanadium oxide (VOx) film, comprising:
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loading a substrate into a deposition chamber; flowing a first gas into the chamber, the first gas containing a reactive oxygen species; flowing nitrogen gas into the chamber; and vaporizing vanadium from a vanadium source while the first gas and the nitrogen gas are flowing into the chamber so as to deposit an amorphous VOx film on the substrate, where x>
0. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42)
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43. A method of manufacturing an amorphous vanadium oxide (VOx) film, comprising:
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loading a substrate into a deposition chamber; flowing a first gas into the chamber, the first gas containing a reactive oxygen species; flowing nitrogen gas into the chamber; and vaporizing vanadium from a vanadium source while the first gas and the nitrogen gas are flowing into the chamber so as to deposit an amorphous VOx film on the substrate, where x>
0, wherein the nitrogen gas stabilizes the deposition rate of VOx. - View Dependent Claims (44, 45, 46, 47, 48, 49)
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50. A method for manufacturing an amorphous vanadium oxide (VOx) film, comprising:
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loading a substrate into a deposition chamber; flowing a first gas into the chamber, the first gas containing a reactive oxygen species; and vaporizing vanadium from a vanadium source while the first gas is flowing into the chamber so as to deposit an amorphous VOx film on the substrate, where x>
0 and wherein the VOx film has a resistivity of at most 0.3 ohm-centimeters and a non-uniformity of resistivity of less than 1.0% over a region having a diameter of at least a 130 mm. - View Dependent Claims (51, 52, 53, 54, 55, 56, 57, 58)
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59. A method for manufacturing an amorphous vanadium oxide (VOx) film, comprising:
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loading a substrate into a deposition chamber; flowing a first gas into the deposition chamber, the first gas comprising a reactive oxygen species; supplying a second gas and a third gas to an ion source associated with the deposition chamber, wherein the second gas comprises an inert gas and the third gas comprises a reactive oxygen species; activating the ion source; and vaporizing vanadium from an vanadium source using the ion source while the first gas is flowing into the chamber and the second gas and the third gas are supplied to the ion source so as to deposit a VOx film on the substrate, where x>
0 and wherein the VOx film has a resistivity of at most 0.3 ohm-centimeters and a non-uniformity of resistivity of less than 3.0% over a region having a diameter of at least a 130 mm. - View Dependent Claims (60, 61, 62, 63, 64, 65, 66)
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Specification