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Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor

  • US 8,329,252 B2
  • Filed: 07/31/2011
  • Issued: 12/11/2012
  • Est. Priority Date: 01/24/2007
  • Status: Active Grant
First Claim
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1. A chemical vapor deposition method for growth of SiC, said method comprising:

  • supplying original species SiH4 and CCl4 into a growth chamber;

    decomposing at elevated temperatures in said growth chamber;

    producing decomposition product SiH2, SiH, Si, CCl3, or CCl2 in said growth chamber;

    producing interaction product HCl, CH3Cl, CH4, or SiH2Cl2 in said growth chamber, as byproducts of said original species SiH4 and CCl4;

    etching by one of said byproducts HCl in said growth chamber to suppress Si nucleation;

    providing main species SiCl2 and CH4 at a cooled insert located on sides of a substrate holder and at a shower-head located on top of said substrate holder, in said growth chamber;

    wherein said shower-head is backed by a graphite insert;

    wherein said cooled insert shields heat in said growth chamber;

    wherein said cooled insert is made of graphite;

    wherein Si to C atom ratio is between 0.7 and 1.3;

    wherein Si to Cl atom ratio is between 0.02 and 1.5;

    wherein parasitic deposits on susceptor, reactor walls, and injector system are suppressed;

    depositing SiC on a substrate located on said substrate holder at a growth substrate temperature range of 1500 to 1800 centigrade.

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