Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor

• US 8,329,252 B2
• Filed: 07/31/2011
• Issued: 12/11/2012
• Est. Priority Date: 01/24/2007
• Status: Active Grant

• Current Assignee: Widetronix, Inc.
• Original Assignee: Widetronix, Inc.
• Inventors: Makarov, Yuri, Spencer, Michael
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US13/194,967
• Publication Number:
  US 20110283933A1
• Time in Patent Office: 499 Days
• Field of Search: 427/249.1, 427/249.15, 427/255.393
• US Class Current: 427/249.15
• CPC Class Codes: C23C 16/32 Carbides
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/4411 Cooling of the reaction chamber walls C23C16/45572 takes precedence
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/08 Reaction chambers; Selection of materials therefor
• CPC Class Codes: C30B 29/36 Carbides

Abstract

A method is described for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, which comprises the steps of supplying original species SiH4 and CCl4 into a growth chamber, decomposing at elevated temperatures, producing decomposition product SiH2, SiH, Si, CCl3, or CCl2, producing interaction product HCl, CH3Cl, CH4, or SiH2Cl2, etching by one of the byproducts HCl to suppress Si nucleation, providing main species SiCl2 and CH4 at a cooled insert located on sides of a substrate holder and at a shower-head located on top of the substrate holder, in the growth chamber, with proper Si to C atom ratio and Si to Cl atom ratio, to suppress parasitic deposits, and depositing SiC on a substrate at a proper growth substrate temperature (1500 to 1800 centigrade range).

Claims

1. A chemical vapor deposition method for growth of SiC, said method comprising:

supplying original species SiH4 and CCl4 into a growth chamber;

decomposing at elevated temperatures in said growth chamber;

producing decomposition product SiH2, SiH, Si, CCl3, or CCl2 in said growth chamber;

producing interaction product HCl, CH3Cl, CH4, or SiH2Cl2 in said growth chamber, as byproducts of said original species SiH4 and CCl4;

etching by one of said byproducts HCl in said growth chamber to suppress Si nucleation;

providing main species SiCl2 and CH4 at a cooled insert located on sides of a substrate holder and at a shower-head located on top of said substrate holder, in said growth chamber;

wherein said shower-head is backed by a graphite insert;

wherein said cooled insert shields heat in said growth chamber;

wherein said cooled insert is made of graphite;

wherein Si to C atom ratio is between 0.7 and 1.3;

wherein Si to Cl atom ratio is between 0.02 and 1.5;

wherein parasitic deposits on susceptor, reactor walls, and injector system are suppressed;

depositing SiC on a substrate located on said substrate holder at a growth substrate temperature range of 1500 to 1800 centigrade.