Manufacturing method of nitride semiconductor light emitting elements

• US 8,329,481 B2
• Filed: 02/09/2012
• Issued: 12/11/2012
• Est. Priority Date: 02/22/2011
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Miyachi, Mamoru
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): DUONG, KHANH B
• Application Number:
  US13/369,504
• Publication Number:
  US 20120214266A1
• Time in Patent Office: 306 Days
• Field of Search: None
• US Class Current: 438/27
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body

Abstract

A manufacturing method of nitride semiconductor light emitting elements, which can reliably form a mechanically stable wiring electrode leading from a light emitting element surface. A structure protective sacrifice layer is formed around a first electrode layer on a device structure layer beforehand, and after separation of the device structure layer into respective portions for the light emitting elements, the resultant is stuck to a support substrate. Subsequently, forward tapered grooves reaching the structure protective sacrifice layer are formed, and the inverse tapered portion formed outward of the forward tapered groove is lifted off in a lift-off step. Thus, an insulating layer is formed on the forward tapered side walls of the light emitting element, and a wiring electrode layer electrically connected to the second electrode layer on the principal surface of the light emitting element is formed on the insulating layer.

Claims

1. A manufacturing method of nitride semiconductor light emitting elements, which forms a device structure layer for a plurality of light emitting elements on a growth substrate for film formation and, after separating said device structure layer into respective portions for the light emitting elements, sticks a support substrate to said device structure layer side and removes said growth substrate, said manufacturing method including:

a step of forming said device structure layer on said growth substrate;

a step of forming a first electrode layer in positions respectively corresponding to said plurality of light emitting elements on a surface of said device structure layer;

a step of forming a structure protective sacrifice layer around said first electrode layer on the surface of said device structure layer;

an element isolating step of forming element isolating grooves in said device structure layer so as to separate said device structure layer into respective portions for the light emitting elements;

a bonding step of, after said element isolating step, sticking said support substrate to said device structure layer side;

a step of, after said bonding step, removing said growth substrate;

a forward tapered groove forming step of forming forward tapered grooves reaching said structure protective sacrifice layer in said device structure layer, thereby separating said device structure layer into the light emitting elements having said first electrode layer and inverse tapered portions on said structure protective sacrifice layer;

a lift-off step of etching said structure protective sacrifice layer, thereby lifting off said inverse tapered portions;

a step of forming a second electrode layer on an exposed surface of said device structure layer exposed by the removal of said growth substrate; and

a wiring electrode layer forming step of forming an insulating layer on side walls of said light emitting elements and forming a wiring electrode layer electrically connected to said second electrode layer on said insulating layer.

2. A manufacturing method according to claim 1, further including:

a mask forming step of forming a mask having openings in forming positions for said forward tapered grooves on said exposed surface of said device structure layer, the mask protecting said exposed surface of said device structure layer, except said openings, and said element isolating grooves,

wherein in said forward tapered groove forming step, the forward tapered grooves are formed by etching through said openings.

3. A manufacturing method according to claim 1, further including:

a step of forming a first adhesive layer over a surface of said device structure layer on which said structure protective sacrifice layer and said first electrode layer are formed; and

a step of forming a second adhesive layer on said support substrate,

wherein in said bonding step, said first adhesive layer and said second adhesive layer are put in contact, and by eutectic bonding of said first adhesive layer and said second adhesive layer, said support substrate is stuck to said device structure layer.

4. A manufacturing method according to claim 3, further including:

a step of etching parts of said second adhesive layer exposed in said element isolating grooves so as to electrically insulate said plurality of light emitting elements from each other.

5. A manufacturing method according to claim 1, wherein in said forward tapered groove forming step, at least one of four side walls of each of said light emitting elements is formed by forming said forward tapered groove so that each said light emitting element has a quadrilateral principal surface.

6. A manufacturing method according to claim 1, wherein in said wiring electrode layer forming step, said wiring electrode layer is electrically connected to a portion of said first electrode layer of a light emitting element adjacent to a light emitting element having its portion of said second electrode layer electrically connected to said wiring electrode layer.