White-emitting LED chips and method for making same
First Claim
1. A method for fabricating light emitting diode (LED) chips, comprising:
- pre-forming a capping wafer, said capping wafer comprising a conversion material;
fabricating a wire-bond free LED wafer comprising a plurality of LEDs;
bonding said capping wafer to said LED wafer using an adhesive such that said conversion material is adjacent said LED wafer, said capping wafer having a coefficient of thermal expansion in the range of 2-25 ppm/°
C.; and
singulating said LED chips upon the completion of all final fabrication steps.
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Accused Products
Abstract
Methods and devices for light emitting diode (LED) chips are provided. In one embodiment of a method, a pre-formed capping wafer is provided, with the capping wafer comprising a conversion material. A wire-bond free LED wafer is fabricated comprising a plurality of LEDs. The capping wafer is bonded to the LED wafer using an adhesive. The LED chips are later singulated upon completion of all final fabrication steps. The capping wafer provides a robust mechanical support for the LED chips during fabrication, which improves the strength of the chips during fabrication. Additionally, the capping wafer may comprise an integrated conversion material, which simplifies the fabrication process. In one possible embodiment for an LED chip wafer, a submount wafer is provided, along with a plurality of LEDs flip-chip mounted on the submount wafer. Additionally, a capping wafer is bonded to the LEDs using an adhesive, and the capping wafer comprises a conversion material. At least some of the light emitted from the LEDs passes through the capping wafer where at least some of the light is converted by the conversion material.
145 Citations
45 Claims
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1. A method for fabricating light emitting diode (LED) chips, comprising:
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pre-forming a capping wafer, said capping wafer comprising a conversion material; fabricating a wire-bond free LED wafer comprising a plurality of LEDs; bonding said capping wafer to said LED wafer using an adhesive such that said conversion material is adjacent said LED wafer, said capping wafer having a coefficient of thermal expansion in the range of 2-25 ppm/°
C.; andsingulating said LED chips upon the completion of all final fabrication steps. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A light emitting diode (LED) chip wafer, comprising:
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a submount wafer; a plurality of LEDs flip-chip mounted on said submount wafer; and a capping wafer bonded to said LED chip wafer using an adhesive, said capping wafer comprising a conversion material, wherein said conversion material is adjacent said LED chip wafer, said capping wafer further comprising a material acting as a robust mechanical support for said LEDs, said capping wafer having a coefficient of thermal expansion in the range of 2-25 ppm/°
C.;wherein at least some of the light emitted from said LEDs passes through said capping wafer where at least some of said light is converted by said conversion material; wherein said LEDs are capable of being singulated. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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40. A light emitting diode (LED) chip, comprising:
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a wire-bond free LED; a capping wafer bonded to said LED using an adhesive, said capping wafer serving as a mechanical support for said LED chip; and a conversion material integrated in said capping wafer, said conversion material adjacent said LED and converting at least some of the light emitted from said LED, said capping wafer having a coefficient of thermal expansion in the range of 2-25 ppm/°
C. - View Dependent Claims (41, 42, 43, 44, 45)
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Specification