Method of fabricating semiconductor substrate and method of fabricating light emitting device
First Claim
1. A method of fabricating a light emitting device, the method comprising:
- forming a plurality of compound semiconductor layers on a first substrate, the compound semiconductor layers comprising a first semiconductor layer;
disposing a second substrate on the compound semiconductor layers;
separating the first substrate from the compound semiconductor layers,wherein forming the plurality of compound semiconductor layers comprises;
forming a plurality of voids in the first compound semiconductor layer; and
increasing a volume of the voids,wherein separating the first substrate comprises;
etching a portion of the first semiconductor layer.
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Abstract
The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
34 Citations
12 Claims
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1. A method of fabricating a light emitting device, the method comprising:
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forming a plurality of compound semiconductor layers on a first substrate, the compound semiconductor layers comprising a first semiconductor layer; disposing a second substrate on the compound semiconductor layers; separating the first substrate from the compound semiconductor layers, wherein forming the plurality of compound semiconductor layers comprises; forming a plurality of voids in the first compound semiconductor layer; and increasing a volume of the voids, wherein separating the first substrate comprises; etching a portion of the first semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 10, 11, 12)
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8. A method of fabricating a light emitting device, the method comprising:
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forming a plurality of compound semiconductor layers on a first substrate, the compound semiconductor layers comprising a first semiconductor layer and a second semiconductor layer contacting the first semiconductor layer; disposing a second substrate on the compound semiconductor layers; separating the first substrate from the second semiconductor layer, wherein forming the plurality of compound semiconductor layers comprises; forming a plurality of voids in the first compound semiconductor layer; and increasing a volume of the voids, and wherein separating the first substrate from the second semiconductor layer comprises twisting the first substrate away from the first semiconductor layer.
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9. A method of fabricating a light emitting device, the method comprising:
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forming a plurality of compound semiconductor layers on a first substrate, the compound semiconductor layers comprising a first semiconductor layer and a second semiconductor layer contacting the first semiconductor layer; disposing a second substrate on the compound semiconductor layers; separating the first substrate from the second semiconductor layer, wherein forming the plurality of compound semiconductor layers comprises; forming a plurality of voids in the first compound semiconductor layer; and increasing a volume of the voids, and wherein separating the first substrate from the second semiconductor layer comprises heating the first substrate such that the voids weaken a coupling force between the first substrate and the first semiconductor layer.
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Specification