Semiconductor device and method for manufacturing the same
First Claim
Patent Images
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an In—
Ga—
Zn—
O based oxide semiconductor layer having an amorphous structure over a substrate by a sputtering method;
heating the In—
Ga—
Zn—
O based oxide semiconductor layer to form an oxide semiconductor layer including crystal grains represented by InGaZnO4 in the amorphous structure; and
forming a channel formation region of a transistor using the oxide semiconductor layer including the crystal grains represented by InGaZnO4,wherein a proportion of the amorphous structure in the In—
Ga—
Zn—
O based oxide semiconductor layer is 90 volume % or less after the heating,wherein a proportion of the crystal grains represented by InGaZnO4 to a whole of crystal grains is 80 volume % or more.
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Abstract
It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
163 Citations
12 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
-
forming an In—
Ga—
Zn—
O based oxide semiconductor layer having an amorphous structure over a substrate by a sputtering method;heating the In—
Ga—
Zn—
O based oxide semiconductor layer to form an oxide semiconductor layer including crystal grains represented by InGaZnO4 in the amorphous structure; andforming a channel formation region of a transistor using the oxide semiconductor layer including the crystal grains represented by InGaZnO4, wherein a proportion of the amorphous structure in the In—
Ga—
Zn—
O based oxide semiconductor layer is 90 volume % or less after the heating,wherein a proportion of the crystal grains represented by InGaZnO4 to a whole of crystal grains is 80 volume % or more. - View Dependent Claims (2, 3, 4, 9, 10)
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5. A method for manufacturing a semiconductor device comprising the steps of:
-
forming an In—
Ga—
Zn—
O based oxide semiconductor layer having an amorphous structure over a substrate by a sputtering method;heating the oxide semiconductor layer to form an oxide semiconductor layer including crystal grains represented by InGaZnO4 in the amorphous structure; and forming a channel formation region of a transistor using the oxide semiconductor layer including the crystal grains represented by InGaZnO4, wherein a proportion of the amorphous structure in the In—
Ga—
Zn—
O based oxide semiconductor layer is 90 volume % or less after the heating,wherein a proportion of the crystal grains represented by InGaZnO4 to a whole of crystal grains is 80 volume % or more, wherein a Zn content by atomic percent is less than an In content by atomic percent in the In—
Ga—
Zn—
O based oxide semiconductor layer, andwherein the Zn content by atomic percent is less than a Ga content by atomic percent in the In—
Ga—
Zn—
O based oxide semiconductor layer. - View Dependent Claims (6, 7, 8, 11, 12)
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Specification