Localized annealing during semiconductor device fabrication

• US 8,329,556 B2
• Filed: 12/19/2006
• Issued: 12/11/2012
• Est. Priority Date: 12/20/2005
• Status: Expired due to Fees

• Current Assignee: Tinggi Technologies Pte., Ltd.
• Original Assignee: Tinggi Technologies Pte., Ltd.
• Inventors: Yuan, Shu, Lin, Jing
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US12/158,678
• Publication Number:
  US 20100047996A1
• Time in Patent Office: 2,184 Days
• Field of Search: 438/458, 438/455, 438/22, 438/24, 438/29, 438/662, 438/660, 257/E21.062
• US Class Current: 438/458
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/2686 using incoherent radiation
• CPC Class Codes: H01L 21/28575 on semiconductor bodies comprising AIIIBV compounds

Abstract

A process for the fabrication of semiconductor devices on a substrate, the semiconductor devices including at least one metal layer. The process includes, removing the substrate and applying a second substrate; and annealing the at least one metal layer by application of a beam of electromagnetic radiation on the at least one metal layer.

Claims

1. A process for reducing cross-contamination of wafers during fabrication of semiconductor devices on a substrate and at least one metal layer, the process comprising:

removing the substrate and applying a second substrate to the semiconductor devices; and

annealing the at least one metal layer by application of a beam of electromagnetic radiation directly on the at least one metal layer, wherein a mask is placed between a source of the beam of electromagnetic radiation and the semiconductor devices, the mask having at least one aperture therethrough for the passage of the beam of electromagnetic radiation through the at least one aperture during the annealing, the at least one aperture being sized and shaped to be substantially the same as the at least one metal layer being annealed.

2. The process of claim 1, wherein the second substrate is applied to the semiconductor devices in a manner selected from the group consisting of:

before the substrate is removed, and after the substrate is removed.

3. The process of claim 1, wherein the second substrate is applied to the semiconductor devices on a second surface of the semiconductor devices, the substrate been removed from a first surface of the semiconductor devices, the first and second surfaces being different;

the first surface being opposite the second surface.

4. The process of claim 1, wherein the beam of electromagnetic radiation is applied at a number of locations on the at least one metal layer, the number and spacing of the locations being determined by the metal of the at least one metal layer, and a thickness of the at least one metal layer;

laser beam being applied sequentially to the number of locations.

5. The process of claim 1, wherein the duration, wavelength, radiation power, and radiation power density of the application of the electromagnetic beam are determined by the metal of the at least one metal layer, and the thickness of the at least one metal layer, and the materials of the semiconductor devices.

6. The process of claim 1, wherein the laser beam is of a frequency and intensity determined by the metal of the at least one metal layer, and the thickness of the at least one metal layer, and the semiconductor devices material.

7. The process of claim 1, wherein there are a plurality of metal layers, the plurality of metal layers being annealed in a manner selected from the group consisting of:

sequentially, and simultaneously.

8. The process as claimed in claim 1, wherein the at least one metal layer is an ohmic contact layer.

9. The process of claim 1, wherein the beam of electromagnetic radiation is selected from the group consisting of:

a laser beam, light from at least one lamp, and light from a bank of lamps.