Via structure and via etching process of forming the same
First Claim
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1. A method, comprising:
- providing a semiconductor substrate;
forming a hard mask layer on the semiconductor substrate;
forming a photoresist layer on the hard mask layer;
patterning the photoresist layer to form a first opening;
patterning the hard mask layer to form a second opening underlying the first opening, exposing a portion of the semiconductor substrate;
etching the exposed portion of the semiconductor substrate to form a via passing through at least a part of the semiconductor substrate;
performing a trimming process to round the top corner of the via; and
removing the photoresist layer.
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Abstract
A via etching process forms a through-substrate via having a round corner and a tapered sidewall profile. A method includes providing a semiconductor substrate; forming a hard mask layer and a patterned photoresist layer on the semiconductor substrate; forming an opening in the hard mask and exposing a portion of the semiconductor substrate; forming a via passing through at least a part of the of semiconductor substrate using the patterned photoresist layer and hard mask layer as a masking element; performing a trimming process to round the top corner of the via; and removing the photoresist layer.
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Citations
20 Claims
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1. A method, comprising:
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providing a semiconductor substrate; forming a hard mask layer on the semiconductor substrate; forming a photoresist layer on the hard mask layer; patterning the photoresist layer to form a first opening; patterning the hard mask layer to form a second opening underlying the first opening, exposing a portion of the semiconductor substrate; etching the exposed portion of the semiconductor substrate to form a via passing through at least a part of the semiconductor substrate; performing a trimming process to round the top corner of the via; and removing the photoresist layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method, comprising:
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providing a semiconductor substrate comprising a hard mask layer formed thereon; forming an interconnect structure in the hard mask layer; forming a photoresist layer on the hard mask layer; patterning the photoresist layer to form a first opening; patterning the hard mask layer to form a second opening underlying the first opening, exposing a portion of the semiconductor substrate; etching the exposed portion of the semiconductor substrate to form a via passing through at least a part of the semiconductor substrate; performing a trimming process to round the top corner of the via; and removing the photoresist layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification