Thin film transistor with a plurality of oxide clusters over the gate insulating layer
First Claim
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1. A semiconductor device comprising:
- a gate electrode layer;
a gate insulating layer over the gate electrode layer;
a plurality of oxide clusters over the gate insulating layer;
an oxide semiconductor layer over the gate insulating layer; and
source and drain electrode layers over the oxide semiconductor layer,wherein the plurality of oxide clusters have electrical conductivity,wherein the oxide semiconductor layer and the source electrode layer are electrically connected to each other,wherein the oxide semiconductor layer and the drain electrode layer are electrically connected to each other, andwherein a channel formation region is formed in the oxide semiconductor layer and the plurality of oxide clusters.
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Abstract
In a thin film transistor including an oxide semiconductor, an oxide cluster having higher electrical conductance than the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer, whereby field effect mobility of the thin film transistor can be increased and increase of off current can be suppressed.
109 Citations
20 Claims
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1. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; a plurality of oxide clusters over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; and source and drain electrode layers over the oxide semiconductor layer, wherein the plurality of oxide clusters have electrical conductivity, wherein the oxide semiconductor layer and the source electrode layer are electrically connected to each other, wherein the oxide semiconductor layer and the drain electrode layer are electrically connected to each other, and wherein a channel formation region is formed in the oxide semiconductor layer and the plurality of oxide clusters. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; a plurality of oxide clusters over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; a buffer layer having n-type electrical conductivity over the oxide semiconductor layer; and source and drain electrode layers over the buffer layer, wherein the plurality of oxide clusters have electrical conductivity, wherein a carrier concentration of the buffer layer is higher than a carrier concentration of the oxide semiconductor layer, wherein the oxide semiconductor layer and the source electrode layer are electrically connected to each other with the buffer layer interposed therebetween, wherein the oxide semiconductor layer and the drain electrode layer are electrically connected to each other with the buffer layer interposed therebetween, and wherein a channel formation region is formed in the oxide semiconductor layer and the plurality of oxide clusters. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification