Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same

• US 8,330,179 B2
• Filed: 10/11/2011
• Issued: 12/11/2012
• Est. Priority Date: 08/01/2002
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Kususe, Takeshi, Sakamoto, Takahiko
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): PATTON, PAUL E
• Application Number:
  US13/271,100
• Publication Number:
  US 20120025256A1
• Time in Patent Office: 427 Days
• Field of Search: 257/90, 257/91, 257/94, 257/95, 257/96, 257/97, 257/98, 257/81, 257/99, 257/88, 257/79
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45169 Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 27/156 : two-dimensional arrays
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01021 : Scandium [Sc]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01059 : Praseodymium [Pr]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01063 : Europium [Eu]
• CPC Class Codes: H01L 2924/01065 : Terbium [Tb]
• CPC Class Codes: H01L 2924/01066 : Dysprosium [Dy]
• CPC Class Codes: H01L 2924/01067 : Holmium [Ho]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/0107 : Ytterbium [Yb]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10336 : Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/20756 : larger or equal to 60 microns less than 70 microns
• CPC Class Codes: H01L 2924/20757 : larger or equal to 70 microns less than 80 microns
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/08 : with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

Claims

1. A nitride semiconductor light-emitting device comprising:

an n-type semiconductor layer, a p-type semiconductor layer; and

an active layer formed of a nitride semiconductor between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer;

an n-electrode and a p-electrode,

wherein at least the p-type nitride semiconductor layer and the active layer define a frustum layered composite, and the layered composite is embedded in a metal member so that a periphery of the layered composite is isolated,

wherein the layered composite has first and second surfaces opposing with each other, the first surface is disposed on a side of the n-type nitride semiconductor layer, and the second surface is disposed on a side of the p-type nitride semiconductor layer, the n-electrode is disposed on the first surface and the p-electrode is disposed on the second surface.

2. A nitride semiconductor light-emitting device comprising:

an n-type semiconductor layer, a p-type semiconductor layer; and

an active layer formed of a nitride semiconductor between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer;

an n-electrode and a p-electrode,

wherein at least the p-type nitride semiconductor layer and the active layer define a frustum layered composite, and the layered composite is supported by a metal member opposing a surface of the layered composite,

wherein the layered composite has first and second surfaces opposing with each other, the first surface is disposed on a side of the n-type nitride semiconductor layer, and the second surface is disposed on a side of the p-type nitride semiconductor layer, the n-electrode is disposed on the first surface and the p-electrode is disposed on the second surface.

3. The nitride semiconductor light-emitting device according to claim 2, wherein the second surface has a smaller width than that of the first surface.

4. The nitride semiconductor light-emitting device according to claim 2, wherein the p-electrode is disposed between the layered composite and the metal member so as to establish an ohmic contact with the p-type nitride semiconductor layer.

5. The nitride semiconductor light-emitting device according to claim 4, wherein the p-electrode contains at least one element of a group consisting of Rh, Al and Ag.

6. The nitride semiconductor light-emitting device according to claim 2, further comprising an insulating film which is light-transmissive and is interposed between the layered composite and the metal member.

7. The nitride semiconductor light-emitting device according to claim 6, further comprising a first metal film interposed between the layered composite and the metal member, wherein the first metal film is disposed in contact with the p-electrode on a surface of the p-electrode and is extended from the surface of the p-electrode to a surface of the insulating film so as to cover the insulating film.

8. The nitride semiconductor light-emitting device according to claim 6, further comprising a reflection layer covered a side surface of the layered composite with the insulating film therebetween, wherein the reflection film has a metal layer or a light-transmissive insulating film.

9. The nitride semiconductor light-emitting device according to claim 2, wherein the first surface of the layered composite is flat.

10. The nitride semiconductor light-emitting device according to claim 2, wherein the n-electrode comprises a transparent electrode comprising ITO or a metal oxide containing In, Sn or Zn.

11. The nitride semiconductor light-emitting device according to claim 2, wherein the layered composite includes part of the n-type nitride semiconductor layer.

12. The nitride semiconductor light-emitting device according to claim 11, wherein the n-type nitride semiconductor layer is extended from the layered composite to a side surface of the nitride semiconductor light-emitting device and a side surface of the metal member is provided to the side surface of the nitride semiconductor light-emitting device.

13. The nitride semiconductor light-emitting device according to claim 2, wherein the layered composite includes the entire n-type nitride semiconductor layer, wherein the layered composite and the n-type nitride semiconductor layer therein are spaced from a side surface of the nitride semiconductor light-emitting device and a side surface of the metal member is provided adjacent to the side surface of the nitride semiconductor light-emitting device.

14. The nitride semiconductor light-emitting device according to claim 2, wherein the nitride semiconductor light-emitting device has a plurality of the layered composites, wherein the layered composites are separated from one another by a protruding portion of the metal member.

15. The nitride semiconductor light-emitting device according to claim 14, wherein the n-type nitride semiconductor is common to the plurality of the layered composites and the layered composites are disposed on the common n-type nitride semiconductor layer.

16. The nitride semiconductor light-emitting device according to claim 15, wherein the n-type nitride semiconductor layer is extended from the layered composite to a side surface of the nitride semiconductor light-emitting device and a side surace of the metal member is provided to the side suraface of the nitride semiconductor light-emitting device.

17. The nitride semiconductor light-emitting device according to claim 14, wherein the layered composites have the respective n-type nitride semiconductor layers and are separated from one another.

18. The nitride semiconductor light-emitting device according to claim 17, wherein the n-type nitride semiconductor layer is spaced from a side surface of the nitride semiconductor light-emitting device and a side surface of the metal member is provided adjacent to the side surface of the nitride semiconductor light-emitting device.

19. The nitride semiconductor light-emitting device according to claim 2, wherein the metal member has a thickness of 50 μ

m or more, wherein the metal member comprises a metal or an alloy containing the metal, the metal being selected from the group consisting of Ti, Ag, Al, Ni, Pt, Au, Rh, Cu and W.

20. The nitride semiconductor light-emitting device according to claim 2, wherein the layered composite is formed in a frustum of a cone, a pyramid, a tetragonal pyramid or a hexagonal pyramid.

21. A light-emitting apparatus comprising:

a nitride semiconductor light-emitting device comprising;

an n-type semiconductor layer, a p-type semiconductor layer; and

an active layer formed of a nitride semiconductor between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer;

an n-electrode and a p-electrode,

wherein at least the p-type nitride semiconductor layer and the active layer define a frustum layered composite, and the layered composite is supported by a metal member opposing a surface of the layered composite; and

a light-transforming member for transforming part of light emitted from the light-emitting device into light having a different wavelength,

wherein the layered composite has first and second surfaces opposing with each other, the first surface is disposed on a side of the n-type nitride semiconductor layer, and the second surface is disposed on a side of the p-type nitride semiconductor layer, the n-electrode is disposed on the first surface and the p-electrode is disposed on the second surface.

22. The light-emitting apparatus according to claim 21, wherein the light-transforming member comprises a phosphor expressed by (Re_1-xR_x)₃(Al_1-yGa_y)₅O₁₂ (0<

x<

1 and 0<

y≦

1, wherein Re represents at least one element selected from the group consisting of Y, Gd, La, Lu, Tb and Sm; and

R represents Ce or Ce and Pr).

23. The light-emitting apparatus according to claim 21, wherein the light-transforming member comprises a nitride phosphor containing Ni, at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba and An;

and at least one element selected from the group consisting of C, Si, Ge, Sn, Ti, Zr, and Hf, and is activated by at least one element selected from the rare earth elements.