System and method of transistor switch biasing in a high power semiconductor switch

• US 8,330,519 B2
• Filed: 07/09/2010
• Issued: 12/11/2012
• Est. Priority Date: 07/09/2010
• Status: Active Grant

• Current Assignee: SIGE Semiconductor Incorporated (Skyworks Solutions Incorporated), Skyworks Solutions Incorporated
• Original Assignee: SIGE Semiconductor Incorporated (Skyworks Solutions Incorporated)
• Inventors: Lam, Lui (Ray), Fuh, Hanching
• Primary Examiner(s): Nguyen, Hai L
• Application Number:
  US12/833,543
• Publication Number:
  US 20120007654A1
• Time in Patent Office: 886 Days
• Field of Search: 327/374, 327/472, 327/365, 327/376, 327/377, 327/427, 327/308, 327/103
• US Class Current: 327/308
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00
• CPC Class Codes: H03K 2217/0018 Special modifications or use of the back gate voltage of a FET
• CPC Class Codes: H03K 5/003 Changing the DC level reinsertion of dc component of a television signal H04N5/16

Abstract

A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.

Claims

1. A high power switch comprising:

a first transistor group switch including a plurality of first transistors of a first type, the first transistor group switch coupled along a signal path formed between a first end and a second end; and

a second transistor group switch including a plurality of second transistors of a second type, the second transistor group switch coupled along a shunt path formed between a shunt end and at least one of the first and second ends of the signal path, a drain and a source of at least one of the first transistors being held at a substantially similar biasing voltage as that applied to a drain and a source of at least one of the second transistors when the switch is in a series mode and when the switch is in a shunt mode.

2. The switch according to claim 1 wherein the first type and the second type are each a unique one of complementary n-type and p-type technology.

3. The switch according to claim 2 wherein the transistors of the second type exhibit a higher insertion loss than the transistors of the first type.

4. The switch according to claim 3 wherein a gate of the at least one of the first transistors is held at a substantially similar gate biasing voltage as a gate of the at least one of the second transistors when the switch is in a series mode and when the switch is in a shunt mode.

5. The switch according to claim 4 wherein the substantially similar biasing voltage at which the drain and the source of the at least one of the first transistors is held is the same as a voltage applied to the drain and source of the at least one of the second transistors, and the substantially similar gate biasing voltage at which the gate of the at least one of the first transistors is held is the same as a gate voltage applied to the gate of the at least one of the second transistors.

6. The switch according to claim 3 wherein the transistors of the first type are n-FETs and the transistors of the second type are p-FETs.

7. The switch according to claim 6 wherein blocking capacitors are coupled other than along the signal path to protect the ends of the signal path from biasing of the transistors.

8. The switch according to claim 7 wherein biasing of the transistors is performed exclusively with a positive supply voltage and ground.

9. The switch according to claim 8 wherein when the circuit is in a series mode, gates of the first transistors and gates of the second transistors are biased with positive source voltage;

when the circuit is in a shunt mode the gates of the first transistors and the gates of the second transistors are biased to ground; and

when the circuit is in anyone of a series mode and a shunt mode, backgates of the second transistors are biased with positive source voltage, while sources and drains of the first transistors, sources and drains of the second transistors, and backgates of the first transistors are biased to ground.

10. A method of high power switching, the method comprising:

providing a first transistor group switch including a plurality of first transistors of a first type, the first transistor group switch coupled along a signal path formed between a first end and a second end;

providing a second transistor group switch including a plurality of second transistors of a second type, the second transistor group switch coupled along a shunt path formed between a shunt end and at least one of the first and second ends of the signal path; and

biasing a drain and a source of at least one of the first transistors at a substantially similar biasing voltage as that applied to a drain and a source of at least one of the second transistors when the switch is in a series mode and when the switch is in a shunt mode.

11. The method according to claim 10 wherein the first type and the second type are each a unique one of complementary n-type and p-type technology.

12. The method according to claim 11 wherein the transistors of the second type exhibit a higher insertion loss than the transistors of the first type.

13. The method according to claim 12 further comprising biasing a gate of the at least one of the first transistors at a substantially similar gate biasing voltage as that applied to a gate of the at least one of the second transistors when the switch is in a series mode and when the switch is in a shunt mode.

14. The method according to claim 13 wherein biasing the drain and the source of the at least one of the first transistors includes biasing the drain and the source of the at least one of the first transistors at a same biasing voltage as that applied to the drain and source of the at least one of the second transistors, and biasing the gate of the at least one of the first transistors includes biasing the gate of the at least one of the first transistors at a same gate biasing voltage as that applied to the gate of the at least one of the second transistors.

15. The method according to claim 12 wherein the transistors of the first type are n-FETs and the transistors of the second type are p-FETs.

16. The method according to claim 15 wherein blocking capacitors are coupled other than along the signal path to protect the ends of the signal path from biasing of the transistors.

17. The method according to claim 16 further comprises biasing the transistors exclusively with a positive supply voltage and ground.

18. The method according to claim 17 further comprising:

when the circuit is in a series mode, biasing gates of the first transistors and gates of the second transistors with positive source voltage;

when the circuit is in a shunt mode, biasing to ground the gates of the first transistors and the gates of the second transistors; and

when the circuit is in anyone of a series mode and a shunt mode, biasing backgates of the second transistors with positive source voltage, biasing to ground sources and drains of the first transistors, sources and drains of the second transistors, and backgates of the first transistors.