Method for fabricating a direct wafer bonded optoelectronic device
First Claim
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1. A method for producing a direct wafer bonded optical device, wherein light passes through one or more transparent ZnO conductor layers, comprising:
- (a) preparing flat and clean surfaces for one or more transparent ZnO conductor layers and a III-nitride optoelectronic device to be bonded; and
(b) performing a direct wafer bonding process between the III-nitride optoelectronic device and a Zn face of the transparent ZnO conductor layers to form at least one wafer bonding interface that is a fusion of the transparent ZnO conductor layers and the III-nitride optoelectronic device, wherein an O face of the transparent ZnO conductor layers is shaped to improve light extraction from the transparent ZnO conductor layers.
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Abstract
An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
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Citations
13 Claims
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1. A method for producing a direct wafer bonded optical device, wherein light passes through one or more transparent ZnO conductor layers, comprising:
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(a) preparing flat and clean surfaces for one or more transparent ZnO conductor layers and a III-nitride optoelectronic device to be bonded; and (b) performing a direct wafer bonding process between the III-nitride optoelectronic device and a Zn face of the transparent ZnO conductor layers to form at least one wafer bonding interface that is a fusion of the transparent ZnO conductor layers and the III-nitride optoelectronic device, wherein an O face of the transparent ZnO conductor layers is shaped to improve light extraction from the transparent ZnO conductor layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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