Top gate thin-film transistor, display device, and electronic apparatus
First Claim
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1. A top gate type thin-film transistor formed on a transparent substrate, comprising:
- a patterned light blocking film,a base layer,a patterned crystalline silicon film,a gate insulating film, anda patterned gate electrode film are sequentially laminated on the transparent substrate,the patterned crystalline silicon film comprises;
a drain region and a source region formed of regions doped with an impurity at high concentration,a channel region having length L that overlaps the patterned gate electrode film; and
a drain side LDD region having length d and a source side LDD region having length d formed of regions doped with an impurity at low concentration that are in contact with the channel region on both sides of the gate electrode film,the patterned light blocking film is divided into a region on a drain side and a region on a source side across the channel region and arranged not to overlap the channel region,a space of an interval x equal to or larger than the length L of the channel region is provided between the region on the drain side and the region on the source side of the divided light blocking films,the region on the drain side of the divided light blocking films is arranged to overlap at least a part of the drain side LDD region having length d and a part of the drain region, andthe region on the source side of the divided light blocking films is arranged to overlap at least a part of the source side LDD region having length d and a part of the source region, andthe interval x of the space provided between the region on the drain side of the light blocking film and the region on the source side of the light blocking film, which are divided across the channel region, is selected to satisfy the following equation (1) with respect to the length L of the channel region, length d of the drain side LDD region, and length d of the source side LDD region;
L+2d≧
x≧
L
eq.(1).
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Abstract
A thin-film transistor manufactured on a transparent substrate has a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate. The channel region has channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film. The light blocking film is divided across the channel region. Interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d), allowing low the manufacturing cost and suppressed photo leak current.
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Citations
5 Claims
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1. A top gate type thin-film transistor formed on a transparent substrate, comprising:
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a patterned light blocking film, a base layer, a patterned crystalline silicon film, a gate insulating film, and a patterned gate electrode film are sequentially laminated on the transparent substrate, the patterned crystalline silicon film comprises; a drain region and a source region formed of regions doped with an impurity at high concentration, a channel region having length L that overlaps the patterned gate electrode film; and a drain side LDD region having length d and a source side LDD region having length d formed of regions doped with an impurity at low concentration that are in contact with the channel region on both sides of the gate electrode film, the patterned light blocking film is divided into a region on a drain side and a region on a source side across the channel region and arranged not to overlap the channel region, a space of an interval x equal to or larger than the length L of the channel region is provided between the region on the drain side and the region on the source side of the divided light blocking films, the region on the drain side of the divided light blocking films is arranged to overlap at least a part of the drain side LDD region having length d and a part of the drain region, and the region on the source side of the divided light blocking films is arranged to overlap at least a part of the source side LDD region having length d and a part of the source region, and the interval x of the space provided between the region on the drain side of the light blocking film and the region on the source side of the light blocking film, which are divided across the channel region, is selected to satisfy the following equation (1) with respect to the length L of the channel region, length d of the drain side LDD region, and length d of the source side LDD region;
L+2d≧
x≧
L
eq.(1). - View Dependent Claims (2, 3, 4, 5)
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Specification
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Current AssigneeNLT Technologies, Ltd. (Tianma Microelectronics Company Limited)
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Original AssigneeNLT Technologies, Ltd. (Tianma Microelectronics Company Limited)
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InventorsMori, Shigeru, Korenari, Takahiro, Tanabe, Hiroshi
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Primary Examiner(s)Fahmy, Wael
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Assistant Examiner(s)MONTALVO, EVA Y
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Application NumberUS13/026,683Publication NumberTime in Patent Office673 DaysField of Search257/72, 257/290, 257/288, 349/43US Class Current257/290CPC Class CodesH01L 29/7833 with lightly doped drain or...H01L 29/78621 with LDD structure or an ex...H01L 29/78633 with a light shieldH01L 33/58 Optical field-shaping elements
