Multi-station plasma reactor with multiple plasma regions
First Claim
Patent Images
1. A plasma chamber, comprising:
- a chamber body defining therein a plurality of process stations;
a plurality of rotating substrate holders, each situated in one of the process stations;
a plurality of in-situ plasma generation regions, each plasma generation region provided above one of the substrate holders;
a plurality of quasi-remote plasma generation regions, each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region; and
,an RF energy source coupled to each of the quasi-remote plasma generation regions.
3 Assignments
0 Petitions
Accused Products
Abstract
A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.
-
Citations
28 Claims
-
1. A plasma chamber, comprising:
-
a chamber body defining therein a plurality of process stations; a plurality of rotating substrate holders, each situated in one of the process stations; a plurality of in-situ plasma generation regions, each plasma generation region provided above one of the substrate holders; a plurality of quasi-remote plasma generation regions, each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region; and
,an RF energy source coupled to each of the quasi-remote plasma generation regions. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A plasma chamber, comprising:
-
a chamber body; a rotating substrate holder situated within the chamber body; a first showerhead; a second showerhead spaced apart from the first showerhead and electrically insulted from the first showerhead and from the chamber body, wherein a quasi-remote plasma generation region is defined in between the first and second showerheads and an in-situ plasma generation region is defined between the second showerhead and the substrate holder, the first showerhead delivering first process gas to the quasi-remote plasma generation region and the second showerhead delivering second process gas to the in-situ plasma generation region, the second showerhead further delivering plasma species from the quasi-remote plasma generation region to the in-situ plasma generation region; an RF source coupled to the first showerhead; and
,a switching mechanism alternatively coupling the second showerhead to the RF source or to ground potential. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
-
-
18. A plasma chamber, comprising:
-
a chamber body defining therein a plurality of process stations; a plurality of rotating substrate holders, each situated in one of the process stations; a plurality of upper showerheads, each upper showerhead provided in corresponding process station; a plurality of lower showerheads, each lower showerhead provided in a corresponding process region and spaced apart from the upper showerhead and electrically insulted from the upper showerhead and from the chamber body, wherein a quasi-remote plasma generation region is defined in between the upper and lower showerheads in each processing region, and an in-situ plasma generation region is defined between the lower showerhead and the substrate holder in each process region, the upper showerhead delivering first process gas to the quasi-remote plasma generation region and the lower showerhead delivering second process gas to the in-situ plasma generation region, the lower showerhead further delivering plasma species from the quasi-remote plasma generation region to the in-situ plasma generation region; an RF source coupled to the plurality of upper showerheads; and
,a switching mechanism alternatively coupling the lower showerhead to the RF source or to ground potential. - View Dependent Claims (19, 20, 21, 22, 23, 25, 26, 27, 28)
-
-
24. A plasma chamber, comprising:
-
a chamber body; a rotating substrate holder situated within the chamber body; a first showerhead; a second showerhead spaced apart from the first showerhead and electrically insulted from the first showerhead and from the chamber body, wherein a quasi-remote plasma generation region is defined in between the first and second showerheads and an in-situ plasma generation region is defined between the second showerhead and the substrate holder, the first showerhead delivering first process gas to the quasi-remote plasma generation region and the second showerhead delivering second process gas to the in-situ plasma generation region, the second showerhead further delivering plasma species from the quasi-remote plasma generation region to the in-situ plasma generation region; a first RF source selectively coupled to the first showerhead either by mechanical switching or software control; and
,a second RF source selectively coupled to the second showerhead either by mechanical switching or software control.
-
Specification