Method of fabricating and encapsulating MEMS devices

• US 8,338,205 B2
• Filed: 08/31/2010
• Issued: 12/25/2012
• Est. Priority Date: 08/31/2009
• Status: Active Grant

• Current Assignee: XI'AN Yisheng Optoelectronics Technology Co., Ltd.
• Original Assignee: Shanghai Lexvu Opto Microelectronics Technology Co., Ltd.
• Inventors: Huang, Herb He
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): JEFFERSON, QUOVAUNDA
• Application Number:
  US12/873,172
• Publication Number:
  US 20110053321A1
• Time in Patent Office: 847 Days
• Field of Search: 438/106, 438/121, 438124-127, 438/99, 438/706, 438/710, 438/725, 438/759, 438/761, 438/763, 438/780, 438/942, 438/FOR.135, 438/FOR.47, 257/E51.012, 257/E51.027, 257/E21.024, 257/E21.033, 257/E21.032, 257/E21.259, 257/E21.492
• US Class Current: 438/48
• CPC Class Codes: B81C 1/00333 Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer
• CPC Class Codes: B81C 2203/0145 Hermetically sealing an opening in the lid

Abstract

A method of fabricating and encapsulating MEMS devices is disclosed, using least two carbon films as the dual sacrificial layers sandwiching a MEMS structural film which is anchored onto a substrate and covered by an encapsulating film containing a plurality of thru-film sacrificial release holes. The dual sacrificial carbon films are selectively removed via plasma-enhanced oxygen or nitrogen ashing through the thru-film sacrificial release holes for releasing the MEMS structural film inside a cavity formed between the encapsulating film and the substrate. The thru-film sacrificial release holes, preferably with a relative high asperity ratio, are then sealed off by depositing a hole-sealing film in a physical vapor deposition process or a chemical vapor deposition process or combination.

Claims

1. A method for fabricating and encapsulating a suspended microstructure onto a substrate at least comprising:

depositing a first sacrificial carbon film onto the substrate;

partially protecting the first sacrificial carbon film by a photolithographically defined first photoresist;

photolithographically patterning the first sacrificial carbon film by using oxygen plasma ashing or nitrogen plasma ashing process;

selectively stripping the first photoresist by wet chemical photoresist stripping process;

depositing a structural film;

photolithographically patterning the structural film with a lithographically defined second photoresist and partially exposing the first sacrificial carbon film;

depositing a second sacrificial carbon film;

partially protecting the second sacrificial carbon film by a photolithographically defined third photoresist;

photolithographically patterning the second sacrificial carbon film by using oxygen plasma ashing or nitrogen plasma ashing process;

selectively stripping the third photoresist by wet chemical photoresist stripping process;

depositing an encapsulating film covering the second sacrificial carbon film, the structural film and the first sacrificial carbon film;

photolithographically patterning the encapsulating film to form a plurality of thru-film sacrificial release holes;

selectively removing the first sacrificial carbon film and the second sacrificial carbon film by using a selective gaseous etch process in a reactor chamber so that the structural film is suspended in a cavity above the substrate; and

depositing a hole-sealing film so that the thru-film sacrificial release holes are sealed;

wherein the first sacrificial carbon film and the second sacrificial carbon film are deposited by;

placing the substrate in a reactor chamber;

introducing a carbon-containing process gas into the chamber and introducing a layer-enhancing additive gas that enhances thermal properties of the first sacrificial carbon film and the second sacrificial carbon film;

generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the substrate by coupling a plasma RF source power to an external portion of the reentrant path; and

coupling RF plasma bias power or bias voltage to the substrate.

2. The method according to claim 1 wherein the selective gaseous etch process uses oxygen in a reactor chamber containing plasma generated with a plasma source power.

3. The method according to claim 1 wherein the selective etch gaseous etch process uses nitrogen in the reactor chamber containing plasma generated with a plasma source power.

4. The method according to claim 1 wherein the first sacrificial carbon film and the second sacrificial carbon film comprise less than 9 percent of hydrogen.

5. The method according to claim 1 wherein the substrate comprises layers selected from among solid state semiconductor, dielectric and conductor materials.

6. The method according to claim 1 wherein the structural film comprises layers selected from the group consisting of polycrystalline silicon, amorphous silicon, single-crystal silicon, silicon oxide, silicon nitride, silicon carbide, organosilicate glass, tungsten, tungsten nitride, tungsten carbide, elemental aluminum and aluminum alloys, aluminum oxide, aluminum nitride, aluminum carbide, elemental tantalum and tantalum alloys, tantalum oxide, elemental titanium and titanium alloys, titanium nitride, titanium oxide, elemental copper and copper alloys, copper oxide, vanadium and vanadium oxide, elemental hafnium and hafnium alloys, hafnium oxide, elemental cobalt and cobalt alloys, elemental nickel and nickel alloys, elemental silver and silver alloys, elemental platinum and platinum alloys, elemental gold and gold alloys.

7. The method according to claim 1 wherein the encapsulating film comprises layers selected from the group consisting of polycrystalline silicon, amorphous silicon, single-crystal silicon, silicon oxide, silicon nitride, silicon carbide, organosilicate glass, tungsten, tungsten nitride, tungsten carbide, elemental aluminum and aluminum alloys, aluminum oxide, aluminum nitride, aluminum carbide, elemental tantalum and tantalum alloys, tantalum oxide, elemental titanium and titanium alloys, titanium nitride, titanium oxide, elemental copper and copper alloys, copper oxide, vanadium and vanadium oxide, elemental hafnium and hafnium alloys, hafnium oxide, elemental cobalt and cobalt alloys, elemental nickel and nickel alloys, elemental silver and silver alloys, elemental platinum and platinum alloys, elemental gold and gold alloys.

8. The method according to claim 1 wherein the hole-sealing film comprises layers selected from the group consisting of polycrystalline silicon, amorphous silicon, single-crystal silicon, silicon dioxide, silicon nitride, silicon carbide, organosilicate glass, tungsten, tungsten nitride, tungsten carbide, elemental aluminum and aluminum alloys, aluminum oxide, aluminum nitride, aluminum carbide, elemental tantalum and tantalum alloys, tantalum oxide, elemental titanium and titanium alloys, titanium nitride, titanium oxide, elemental copper and copper alloys, copper oxide, vanadium and vanadium oxide, elemental hafnium and hafnium alloys, hafnium oxide, elemental cobalt and cobalt alloys, elemental nickel and nickel alloys, elemental silver and silver alloys, elemental platinum and platinum alloys, elemental gold and gold alloys.

9. The method according to claim 1 wherein the thru-film sacrificial release holes exhibits a relatively high aspect ratio of at least 1 to 1.

10. The method according to claim 1 wherein said depositing the hole-sealing film is done by a physical vapor deposition process using a target plate inside a deposition chamber.

11. The method according to claim 10 wherein said physical vapor deposition process employs a sputtering deposition process.

12. The method according to claim 11 wherein the sputtering deposition process uses gaseous argon so that the cavity contains gaseous argon and the thru-film sacrificial release holes are sealed.

13. The method according to claim 10 wherein said physical vapor deposition process employs an evaporation deposition process.

14. The method according to claim 10 wherein the target plate forms a slant angle with the substrate in the deposition chamber.

15. The method according to claim 14, wherein the slant angle is from 0 degree to 30 degree.

16. The method according to claim 1 wherein said depositing the hole-sealing film is done by a chemical vapor deposition process inside a deposition chamber.